Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]

Mouret, I.; Calvet, M.-C.; Calvel, P.; Tastet, P.; Allenspach, M.; LaBel, Kenneth A.; Titus, J.L.; Wheatley, C.F.; Schrimpf, R.D.; Galloway, K.F.

doi:10.1109/23.510737

Cited by 12 publications

(2 citation statements)

References 8 publications

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“…The SEGR threshold is more abrupt when the fluence is plotted as a function of the gate voltage, VGS, as opposed to as a function of the drain voltage, Vas. This supports the fact that SEGR is very sensitive to any small variation in the gate bias [9]. Fig.…”

Section: Methodssupporting

confidence: 78%

Measurement of a cross-section for single-event gate rupture in power MOSFETs

Mouret

Calvel²,

Allenspach

et al. 1996

IEEE Electron Device Lett.

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The heavy-ion fluence required to induce SingleEvent Gate Rupture (SEGR) in power MOSFET's is measured as a function of the drain bias, VDS, and as a function of the gate bias, VGS. These experiments reveal the abrupt nature of the SEGR-voltage threshold. In addition, the concepts of crosssection, threshold, and saturation in the SEGR phenomenon are introduced. This experimental technique provides a convenient method to quantify heavy-ion effects in power MOSFET's.

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Section: Methodssupporting

confidence: 78%

Measurement of a cross-section for single-event gate rupture in power MOSFETs

Mouret

Calvel²,

Allenspach

et al. 1996

IEEE Electron Device Lett.

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“…In the former case, tbis kind of event depends on the gate-source and drain-source voltages applied to the transistor in the off-state 1441, [45]. Recent work has revealed that a normal incident beam favors SEGR and that the temperature has no influence [46]. A similar phenomenon has also been observed in FPGA device and has been called single event dielectric breakdown [47].…”

Section: E Destructive Phenomenamentioning

confidence: 91%

Recent trends in single-event effect ground testing

Duzellier

Ecoffet

1996

IEEE Trans. Nucl. Sci.

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Single-event phenomena result from a single particle, heavy ion or proton, inducing trainsients in the sensitive volume of integrated circuits. Particle accelerators are used to simulate the space environment in order to perform a full characterization of the components. This paper describes the methods and facilities necessary for single-event effect (SEE) testing as well as recent trends observed in the device response to radiation.

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