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Various single-event upset (SEU) conditions are studied by three-dimensional device simulation with the purpose of going deeply into the understanding of the mechanisms governing the SEU sensitivity for a large variety of tracks. The results give a better view of what regions are sensitive. They clearly point out that some generally accepted notions must be revised as considering the normal incidence case to be the most sensitive or neglecting PMOS contribution.

International audienceThis paper presents a new methodology for single-event upset laser testing of commercial off-the-shelf SRAMs. This methodology is based on backside laser test and is illustrated with some experimental results obtained with a new dedicated laser test bench