Various SEU conditions in SRAM studied by 3-D device simulation

Abstract

Various single-event upset (SEU) conditions are studied by three-dimensional device simulation with the purpose of going deeply into the understanding of the mechanisms governing the SEU sensitivity for a large variety of tracks. The results give a better view of what regions are sensitive. They clearly point out that some generally accepted notions must be revised as considering the normal incidence case to be the most sensitive or neglecting PMOS contribution.

SEU reliability analysis of advanced deep-submicron transistors

“…In the present study, we have not accounted them (particle strike was always vertically), but it is expected that the reliability should degrade with all of these. It has indeed been shown that because of extreme charge enhancement, angular tracks can have as much as three times lower than the vertical strike [7].…”

“…Device simulation has been the most important tool in providing the insight into the SEU phenomenon from the earliest history of numerical device modeling. We have opted using 2-D simulations for this work, since much comprehension has been gained in the past through the use of 2-D simulation programs [1], [6] and often, three-dimensional (3-D) simulations are necessary only for angular strikes [7]. The identical electrical-behavior prediction by 2-D and 3-D simulations has indeed been noted before [6], and it has been shown by others that 2-D simulations match well with experimental data [8].…”

Dependability assessment of by-wire control systems using fault injection

“…Some soft errors, and less probable hard errors [12], are also caused by cosmic radiation. A relevant phenomenon is the induction of secondary particles; the nature, energy, and direction of which could result in complex chain reactions [13] [14], as for example, the case of the B-10 isotope [15]. Due to a neutron incidence, this isotope is capable of fission into a Li-7 recoil nucleus, a gamma photon, and an alpha particle.…”

Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM

“…As the structure of 6T-SRAM is symmetric and the N-MOSFET is more sensitive to radiation effect than the PMOS [15], the worst case corresponds to a hit on one NMOS transistor in off state (N1 in Fig.7 for example) and is sufficient to evaluate the impact of radiation on the 6T SRAM cell.…”