Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs

Hubert, G.; Palau, J.M.; Castellani-Coulie, K.; Calvet, M.-C.; Fourtine, S.

doi:10.1109/23.983156

Cited by 60 publications

(26 citation statements)

References 27 publications

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“…The multi-scales modeling and physics-based MonteCarlo simulations have been widely developed [5,[10][11][12][13][14][15][16][17] and allows for investigating SEE trends.…”

Section: Musca Sep 3 Methodologymentioning

confidence: 99%

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MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

Hubert

Duzellier

Bezerra

et al. 2009

2009 European Conference on Radiation and Its Effects on Components and Systems

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“…The multi-scales modeling and physics-based MonteCarlo simulations have been widely developed [5,[10][11][12][13][14][15][16][17] and allows for investigating SEE trends.…”

Section: Musca Sep 3 Methodologymentioning

confidence: 99%

“…The approach for modeling the collection mechanisms in MUSCA SEP 3 considers [12] the ion track as series of punctual charges Q i whose location is characterized by a distance d i to the drain. This model ( fig.…”

Section: B Carriers Transport and Charge Collectionmentioning

confidence: 99%

MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

Hubert

Duzellier

Bezerra

et al. 2009

2009 European Conference on Radiation and Its Effects on Components and Systems

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“…A second class of tools (using statistical methods) has been also proposed: the BGR method [18] and the DASIE [19] tool allowing the cell designers to approach the SEE phenomena with a good degree of comfort.…”

Section: Set Characterisation Of the Standard Cell Librarymentioning

confidence: 99%

A Practical Approach to Single Event Transients Analysis for Highly Complex Designs

Alexandrescu

Costenaro²,

Nicolaidis³

2011

2011 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems

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ISBN 978-1-4577-1713-0International audienceSingle Event Transients are considerably more difficult to model, simulate and analyze than the closely-related Single Event Upsets. The work environment may cause a myriad of distinctive transient pulses in various cell types that are used in widely different configurations. We present practical methods to help characterizing the standard cell library using dedicated tools and results from radiation testing. Furthermore, we analyze the SET propagation in logic networks using a standard (reference) serial fault simulation approach and an accelerated fault simulation technique, taking in account both logic and temporal considerations. The accelerated method provides similar results as the reference approach while offering a considerable increase in the simulation speed. However, the simulation approach may not be feasible for large (multi-million cells) designs that could benefit from static analysis methods. We benchmark the results of a static, probabilistic approach against the reference and accelerated methods. Finally, we discuss the integration of the SET analysis in a complete Soft Error Rate analysis flow

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“…Nuclear reactions can appear anywhere inside the interaction volume V int . Large variations in the properties of the secondary ions created by nuclear reactions of protons and neutrons (nucleons) with silicon may appear [10,11]. In fact, several secondary ions can be simultaneously generated by a specific nuclear reaction.…”

Section: N/p Nuclear Reactionmentioning

confidence: 99%

“…Methods have been proposed, using combined nuclear codes and device simulations or semiempirical coupling of nuclear physics and experimental data [7][8][9][10][11]. Since 1998, a neutron-silicon nuclear database was established and updated [10] and in 2001, Hubert et al [11] proposed a new approach based on nuclear database coupling with occurrence criteria deduced from a Detailed Analysis of Secondary Ion Effect (DASIE).…”

Section: Introductionmentioning

confidence: 99%

Use of nuclear data for space and aeronautic designs

Palau

Carriere

Buard³

et al. 2007

Nd2007

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Abstract. Until recently, the effects of radiation environment on on-board electronics on launchers and aircraft had not been seriously taken into account. The situation has changed. And one of the most significant effects observed on on-board electronics is what we call Single Event Upset (SEU). This talk explains how the combination of electrical sensitivity of components and nuclear physics is important in the calculation of SEU rates, and emphasizes the aspects of nuclear physics useful to give the probability for a dangerous event to occur. Some circumvention methods will be rapidly identified.

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Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs

Cited by 60 publications

References 27 publications

MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

MUSCA SEP<sup>3</sup> contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

A Practical Approach to Single Event Transients Analysis for Highly Complex Designs

Use of nuclear data for space and aeronautic designs

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