Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO<sub>2</sub>/Si (MFIS) Gate Structure

Shen, Zhenxing; Tian, Fengbin; Xu, Hao; Xiang, Jinjuan; Li, Ting‐Ting; Chai, Junshuai; Duan, Jing; Han, Kai; Wang, Xiaolei; Wang, Wenwu; Ye, Tianchun

doi:10.1109/ted.2021.3139285

Cited by 32 publications

(9 citation statements)

References 31 publications

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“…Retention degradation has been a significant challenge for FeFETs over several decades. The loss of retention over time is attributed to two main reasons: the presence of a depolarization field due to a finite capacitance in series with the ferroelectric layer and the gate leakage followed by trapping and detrapping effect in the interface layers in the gate stack. − Clearly, operation of a CAM cell can be affected because of this issue. If V th of the FeFET in our CAM cell increases with time, the match line (ML) and the sensed output voltage with respect to V SL will shift, as shown in Figure .…”

Section: Resultsmentioning

confidence: 99%

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

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Lehninger

et al. 2023

ACS Appl. Electron. Mater.

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Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. Content-addressable memories (CAMs) are the quintessential example of CIM, which conduct a parallel search over a queue or stack to obtain the matched entries for a given input data. CAM cells offer the ability for massively parallel searches in a single clock cycle throughout an entire CAM array for the input query, thereby enabling pattern matching and searching functionality. Therefore, CAM cells are used extensively for pattern matching or search operations in data-centric computing. This paper investigates the impact of retention degradation on IGZO-based FeTFT on the multibit operation in content CAM cell applications. We propose a scalable multibit 1FeTFT-1T-based CAM cell composed of only one FeTFT and one transistor, thus significantly improving the density and energy efficiency compared with conventional complementary metal–oxide–semiconductor (CMOS)-based CAM. We successfully demonstrate the operations of our proposed CAM with storage and search by exploiting the multilevel states of the experimentally calibrated IGZO-based FeTFT devices. We also investigate the impact of retention degradation on the search operation. Our proposed IGZO-based 3-bit and 2-bit CAM cell shows 104 s and 106 s retention, respectively. The single-bit CAM cell shows lifelong (10 years) retention.

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Section: Resultsmentioning

confidence: 99%

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

Thunder

Lehninger

et al. 2023

ACS Appl. Electron. Mater.

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“…Despite the obvious limitation that the MOSFET dimensions should be increased relative to the ferroelectric film, there is a clear advantage regarding memory characteristics and reliability when compared to the existing MFIS FeFET, which suffers from degradation of polarization switching and premature deterioration of the gate insulator owing to the ferroelectric film's high dielectric constant, as shown in Table S4 (ESI †). [27][28][29][30] Fig. 3(a) shows the capacitance ratio and memory window according to A FE /A MOS .…”

Section: Resultsmentioning

confidence: 99%

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

et al. 2022

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“…When voltage is applied to the device, the voltage is divided into the Hf 0.5 Zr 0.5 O 2 film and the SiO x IL based on the thickness and k ratio of each layer; for example, in a metal/10 nm Hf 0.5 Zr 0.5 O 2 ( k ∼30)/1 nm SiO x ( k ∼3.9)/Si MFIS capacitor, the applied voltage in the SiO x IL is 43% of the total applied voltage. A large voltage divided into the IL not only increases the operating voltage but also damages the IL itself and generates trap sites, severely limiting the reliability of the device. ,− …”

Section: Semiconductor–ferroelectric Interfacesmentioning

confidence: 99%

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

et al. 2023

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Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both academia and industry because of their superior scalability�in which their ferroelectric properties can be maintained even below 10 nm thickness�and excellent compatibility with current complementary metal−oxide− semiconductor technology. Regarding recent efforts to downscale the technology node of semiconductor processing, the emergence of ferroelectric properties in fluorite-structured oxide thin films at small length scales is of particular interest. As the length scale of the fluorite-structured oxide thin films reaches the atomic scale, the contribution of the interfacial layer to the properties naturally increases. In particular, the quality and type of interfacial layer, as well as the reaction chemistry in response to the electric field, play a major role in determining the properties of the devices. Consequently, understanding the chemistry of ferroelectric−electrode and ferroelectric−semiconductor interfaces is crucial for their use in industrial applications in the near future. In this context, emerging semiconductor devices based on fluorite-structured oxide ferroelectrics, including ferroelectric field-effect transistors, ferroelectric random-access memories, and ferroelectric tunnel junctions, and the impact of interface chemistry in the devices are reviewed in detail.

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Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO₂/Si (MFIS) Gate Structure

Cited by 32 publications

References 31 publications

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

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Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Cited by 32 publications

References 31 publications

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

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Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO₂/Si (MFIS) Gate Structure