Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs

Kutsuki, Katsuhiro; Watanabe, Yukihiko; Yamashita, Yusuke; Soejima, Narumasa; Kataoka, Keita; Onishi, Toru; Yamamoto, Katsuhiro; Fujiwara, Haruhiko

doi:10.1016/j.sse.2019.03.027

Cited by 10 publications

(6 citation statements)

References 21 publications

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“…In SiC-MOSFETs, μ eff can be divided into three components based on the scattering factors, namely the Coulomb scattering mobility (μ C ), optical phonon scattering mobility (μ opt ), and surface roughness scattering mobility (μ SR ). [29][30][31] These scattering mobility values were calculated from the temperature dependence of μ eff versus the effective field (E eff ). 23) 3.…”

Section: Experimental Methodsmentioning

confidence: 99%

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO₂/SiC gate interface

Kagoshima¹,

Takeuchi²,

Kutsuki³

et al. 2022

Jpn. J. Appl. Phys.

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To investigate the impact of stress at the SiO2/SiC gate interface on the channel mobility of 4H-SiC trench MOSFETs, we fabricated trench MOSFETs with two variations of stress in channel region by changing the deposition temperature of polycrystalline silicon used for gate electrodes. The results found that effective mobility was enhanced by several dozen MPa of tensile stress induced by the polycrystalline silicon. Based on the temperature dependence of mobility, all scattering mobilities were enhanced. It was supposed that the electron effective mass decreased because of tensile stress induced at the channel region.

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Section: Experimental Methodsmentioning

confidence: 99%

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO₂/SiC gate interface

Kagoshima¹,

Takeuchi²,

Kutsuki³

et al. 2022

Jpn. J. Appl. Phys.

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“…The I D -V G characteristics were measured using two methods: in the first method, the current path was from the surface drain electrode to the source electrode [UP measurements, Fig. 1(a)], 20) and in another method, the current path was from the backside drain electrode to the source electrode [DOWN measurements, Fig. 1(b)].…”

Section: Experimental Methodsmentioning

confidence: 99%

“…To extract an accurate channel resistance, the parasitic series resistance (R S ) must be removed. 20) Considering that the ratio of R sh and R C in the total resistance (R total ) is about 1%, which is small enough to be neglected, R S can be expressed as 2 shows the I D -V G curve, which contains R S , measured at 298 K. For an applied gate voltage (V G ) of above 20 V, the drain current saturates because the ratio of R S to R ch increases and the voltage drop due to R S becomes too large to be neglected. Therefore, we propose a method for eliminating R S from the measurement results.…”

Section: Experimental Methodsmentioning

confidence: 99%

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An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs

Kutsuki

Kagoshima

Onishi

et al. 2020

Jpn. J. Appl. Phys.

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We propose an experimental method for evaluating channel mobility that eliminates the parasitic series resistance in trench metal-oxidesemiconductor field-effect transistors (MOSFETs). It is found that the parasitic resistance increases with increasing temperature, which is mainly caused by optical phonon scattering in the drift layer of trench MOSFETs. The measurement method in which the current path is from the surface drain electrode to the source electrode underestimates the effective mobility because of the voltage drop caused by the drift layer resistance at the bottom of the trench gate. The proposed measurement method avoids this underestimation.

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“…) Considering the wide band gap characteristics of carrier mobility, (d𝜇 )/dT is very small and can be ignored [10]. Therefore, the above formula can be further simplified as follows:…”

Section: Influence Of Temperature On Leakage Currentmentioning

confidence: 99%

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

2023

J. Phys.: Conf. Ser.

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With the development of science and technology, traditional silicon-based semiconductor devices can no longer support the development of science and technology. As a new material, silicon carbide has many advantages. In this paper, the working principle of MOSFET is studied, and the characteristics of silicon carbide are sorted and analyzed, based on which the influence of temperature on the basic parameters of the MOSFET device is further studied. It is concluded that temperature affects the leakage current through the influence of threshold voltage drop and carrier: when the device operating voltage is high, the mobility determines the leakage current; at low operating voltage, the threshold voltage determines the leakage current. The research on temperature characteristics of SiC MOSFET is improved in this paper, which promotes the development of microelectronics technology.

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Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs

Cited by 10 publications

References 21 publications

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO₂/SiC gate interface

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO₂/SiC gate interface

An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

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Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs

Cited by 10 publications

References 21 publications

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface

An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

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Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO₂/SiC gate interface

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO₂/SiC gate interface