Experimental Investigation of Domain Wall Motion and Switching in Antiferroelectric Liquid Crystal Displays

Using standard expressions for the various terms in the Gibbs free energy, the switching in antiferroelectric liquid crystal (AFLC) displays is simulated and the time evolution of various energy terms and of the liquid crystal director distributions are calculated. It is shown that when returning from a strong positive voltage to zero, one can reach two types of antiferroelectric state: the normal alternating state with the two bulk polarizations perpendicular to the electrodes and opposite to each other, and the alternative splayed symmetric state with two bulk polarizations parallel to the electrodes and again opposite to each other. The former case gives rise to tri-state switching characteristics, the latter to V-shaped switching. In general strong polar interaction with the alignment layer favours V-shaped switching while weak or no polar interaction give rise to tri-state switching characteristics. Since the V-shaped characteristic has so far only been demonstrated experimentally in ferroelectric liquid crystals (or antiferroelectric liquid crystals being in the ferroelectric state), the difference in AFLCs is discussed and the conditions for continuous switching are modelled. The simulations show that the switching characteristics of the antiferroelectric display can be controlled by the surface parameters.

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An Extended Bilayer Model for Domain Growth in Antiferroelectric Liquid Crystal Display

Jhun¹,

Chen²,

Yoon³

et al. 2010

Molecular Crystals and Liquid Crystals

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Experimental Investigation of Domain Wall Motion and Switching in Antiferroelectric Liquid Crystal Displays

Cited by 3 publications

References 3 publications

Uniform Theory of V-Shape Characteristics

Uniform Theory of V-Shape Characteristics

Simulations of energy and switching in AFLCDs with different boundary conditions

An Extended Bilayer Model for Domain Growth in Antiferroelectric Liquid Crystal Display

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