2004
DOI: 10.1364/ao.43.004446
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Experimental method based on wavelength-modulation spectroscopy for the characterization of semiconductor lasers under direct modulation

Abstract: An experimental method is presented for characterization of the combined intensity and frequency modulation produced when the injection current of a laser diode is modulated. The reported technique is based on the analysis of the harmonic signals produced when a modulated laser is used to probe a gas absorption line by the so-called wavelength-modulation spectroscopy method. Based on a theoretical model of this technique, we present two methods that facilitate the determination of ͑i͒ the deviation in laser fr… Show more

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Cited by 36 publications
(25 citation statements)
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“…Good qualitative agreement is observed, but quantitative discrepancies occur for the same reason as previously mentioned. Here again, the observed behavior is very similar to the situation experienced when a molecular absorption line is probed by a wavelength-modulated laser: the amplitude of the 1f signal varies periodically with the phase Φ 1 of the lock-in detection and the signal of maximum amplitude is obtained for Φ 1 ¼ Ψ as in WMS, where Ψ is the IM-WM phase shift [15]. The only but important difference is that the 1f signal is free from background offset for any detection phase, whereas such a background offset is usually present in the 1f -WMS signal as a result of the laser residual IM occurring when the current of a semiconductor laser is modulated [16].…”
Section: Influence Of the Detection Phase On The 1f Signalsupporting
confidence: 67%
“…Good qualitative agreement is observed, but quantitative discrepancies occur for the same reason as previously mentioned. Here again, the observed behavior is very similar to the situation experienced when a molecular absorption line is probed by a wavelength-modulated laser: the amplitude of the 1f signal varies periodically with the phase Φ 1 of the lock-in detection and the signal of maximum amplitude is obtained for Φ 1 ¼ Ψ as in WMS, where Ψ is the IM-WM phase shift [15]. The only but important difference is that the 1f signal is free from background offset for any detection phase, whereas such a background offset is usually present in the 1f -WMS signal as a result of the laser residual IM occurring when the current of a semiconductor laser is modulated [16].…”
Section: Influence Of the Detection Phase On The 1f Signalsupporting
confidence: 67%
“…10b by choosing the reference point for 0 dB to be 500 Hz. The 3 dB cutoff frequencies of the 2997 nm ICL and the 3266 nm ICL are 80 kHz and 10 kHz, respectively, which are higher than those of QCLs (i.e., ~400 Hz) [12] and 2-μm DFB DLs (i.e., ~4 kHz) [8]. Furthermore, the 6 dB cutoff frequencies of the 2997 nm ICL and the 3266 nm ICL are 300 and 100 kHz, respectively.…”
Section: Fm Responsementioning
confidence: 85%
“…Note that we introduce the FM/IM phase shift ψ 1 in the IM rather than in the FM of the laser. If the phase shift ψ (called the IM/FM phase shift) is introduced in the FM, as described in the literature [5,8], the relationship between ψ and ψ 1 can be written as follows:…”
Section: Laser Modulation Parameters In the Wms Measurement Modelmentioning
confidence: 99%
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