Experimental observation and physics of &amp;#x201C;negative&amp;#x201D; capacitance and steeper than 40mV/decade subthreshold swing in Al&lt;inf&gt;0.83&lt;/inf&gt;In&lt;inf&gt;0.17&lt;/inf&gt;N/AlN/GaN MOS-HEMT on SiC substrate

Then, Han Wui; DasGupta, Sandeepan; Radosavljević, M.; Chow, Loren A.; Chu-Kung, B.; Dewey, G.; Gardner, S.; Gao, Xiang; Kavalieros, J.; Mukherjee, Niloy; Metz, M.; Oliver, Miguel; Pillarisetty, R.; Rao, Valluri; Sung, Soo Hak; Yang, Guanhua; Chau, R.

doi:10.1109/iedm.2013.6724709

Cited by 29 publications

(25 citation statements)

References 8 publications

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“…Figure 6 summarizes the GaN-based devices on Si, SiC, and sapphire substrates for ON/OFF ratio and subthreshold swing [7,10,19,20,21,22,23]. This study demonstrates the InAlN barrier GaN MOS-HEMT for SS <60 mV/dec (reverse sweep SS = 28 mV/dec) with the first time directly-on-Si and outstanding performance with high ON/OFF ratio (~10 7 ).…”

Section: Resultsmentioning

confidence: 91%

“…The InAlN/GaN on Si with ~10 7 and 10 8 ON/OFF ratio with Ohmic and hybrid source/drain, respectively, is reported [8,9]. Intel exhibits a near ideal 60 mV/dec of subthreshold swing for MIS-HEMT enhancement mode, and a depletion mode device with steep SS < 60 mV/dec because of “negative” capacitance effect is shown using an AlInN metal-oxide-semiconductor (MOS) HEMT on SiC [10]. The negative capacitance concept is already demonstrated for steep switching on the Complementary Metal-Oxide-Semiconductor (CMOS) platform, including experimental and simulation development [11].…”

Section: Introductionmentioning

confidence: 99%

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Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

Chen

Tang

et al. 2018

Sensors

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InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.

show abstract

Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

Chen

Tang

et al. 2018

Sensors

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show abstract

“…In this regime of negative capacitance, we show that we obtain a higher charge than in a corresponding capacitor with a passive dielectric. Non-trivial capacitancevoltage behavior in such capacitors have also been reported experimentally [10], [11]. Next, we port the parallel-plate electromechanical capacitor to the gate capacitor of a FET.…”

Section: Introductionmentioning

confidence: 75%

Transistor Switches Using Active Piezoelectric Gate Barriers

Jana

Ajoy

Snider

et al. 2015

IEEE J. Explor. Solid-State Comput. Devices Circuits

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Abstract-This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical capacitor resulting in a negative capacitance. The first consequence of this amplification is a boost in the oncurrent of the transistor. As a second consequence, employing the Lagrangian method, we find that by using the negative capacitance of a highly compliant piezoelectric barrier, one can potentially reduce the subthreshold slope of a transistor below the room temperature Boltzmann limit of 60 mV/decade. However, this may come at the cost of hysteretic behavior in the transfer characteristics.

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“…Quantum-well MOSFETs [8] 81 InGaZnO-Based Thin-Film Transistor [9] 85 Al 0.83 In 0.17 N/AlN/GaN MOS-HEMT on SiC Substrate [10] 40 The nothing-on-insulator (NOI) transistor [11,12] 50 Metal-Ferroelectric-Insulator [13] 150 Double-Gate Strained-Ge Heterostructure Tunneling FET [14] 52 Fe-FET with P(VDF-TrFE)/SiO2 Gate Stack [13] 13 Metal-Ferroelectric-Metal-Oxide-Semiconductor FET [15] 46-58 Vertical Si-Nanowire n-Type Tunneling FETs [16] 30 would bring transformative change in the performance and energy efficiency of both ultra-low-power and high performance micro-/nano-electronic applications. We formally named this new device Silicon-on-Ferroelectric Insulator Field Effect (SOFFET) [20,21].…”

Section: Structurementioning

confidence: 99%

Silicon-on-Ferroelectric Insulator field effect transistor (SOFFET): Partially depleted structure for sub-60mV/decade applications

Es-Sakhi

Chowdhury

2015

Materials Science in Semiconductor Processing

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Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al<inf>0.83</inf>In<inf>0.17</inf>N/AlN/GaN MOS-HEMT on SiC substrate

Cited by 29 publications

References 8 publications

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications

Transistor Switches Using Active Piezoelectric Gate Barriers

Silicon-on-Ferroelectric Insulator field effect transistor (SOFFET): Partially depleted structure for sub-60mV/decade applications

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