Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths

Hagan, David; Nedeljkovic, Milos; Cao, Wei; Thomson, David J.; Mashanovich, Goran Z.; Knights, Andrew P.

doi:10.1364/oe.27.000166

Cited by 4 publications

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It requires a shift of the working wavelength to 2 µm and beyond in order for it to be utilized in MWP applications (Capmany et al, 2013;Liu et al, 2016;Zhang and Yao, 2016). In addition, a monolithic integrated solution combining high-performance light sources and detectors, low loss passive devices, and complementary metal-oxide-semiconductor (CMOS) and RF circuits on a single platform with operating wavelength beyond 2 µm is also a challenge (Soref, 2008;Roelkens et al, 2013;Hagan et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

et al. 2019

Self Cite

View full text Add to dashboard Cite

In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 µm to show the potential of the GeSn materials in shortwave infrared photonics 23. However, there are only a few discussions about high frequency capabilities of GeSn photodetectors. It is needed to understand the potential of GeSn detectors as high frequency devices. This paper discusses comprehensively about the performance of GeSn photodiodes with 6.44 and 9.24% Sn for high frequency applications including high speed measurements and simulations. With high Sn incorporation, the cutoff wavelength is extended up to 2.2 and 2.5 µm wavelengths for 6.44 and 9.24% Sn devices, respectively. The photodiodes' bandwidth is 1.78 GHz, and the simulation shows excellent agreement with measurement results. The reported GeSn photodetectors together with recently reported GeSn lasers and other GeSn microwave photonic components will be a potential candidate for integrated microwave photonics.

show abstract

Section: Introductionmentioning

confidence: 99%

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

Belogolovskii,

Fainman,

Alic

2024

Advanced Optical Materials

View full text Add to dashboard Cite

Free carrier absorption (FCA) is established to be the cause of nonlinear losses in plasma‐enhanced chemical vapor deposition (PECVD) silicon‐rich nitride (SRN) waveguides. To validate this hypothesis, a photo‐induced current is measured in SRN thin films with refractive indices varying between 2.5 and 3.15 when a C‐band laser light is illuminating the SRN films at various powers, indicating the generation of free carriers. Furthermore, nonlinear loss dynamics is, for the first time, measured and characterized in detail in SRN waveguides by utilizing high peak power C‐band complex shape optical pulses for estimation of free carrier generation (FCG) and free carrier recombination (FCR) lifetimes and their dynamics. Both FCG and FCR are found to decrease with an increase in the refractive index of SRN, and, specifically, the FCR lifetimes are found (92 ± 7) ns, (39 ± 3) ns, and (31 ± 2) ns for the SRN indices of 2.7, 3, and 3.15, respectively. Lastly, nonlinear losses in high refractive index SRN waveguides are demonstrated to be minimized and altogether avoided when the pulse duration reduced below the free carrier generation lifetime, thus providing a way of taking a full advantage of the large inherent SRN nonlinear properties.

show abstract

High-speed performance of a TDFA-band micro-ring resonator modulator and detector

Hagan

Wang

et al. 2020

Opt. Express

View full text Add to dashboard Cite

We demonstrate a silicon-on-insulator micro-ring resonator (MRR) modulator and defect-mediated (DM) detector operating at a wavelength near 2 µm for use in the thulium doped fiber amplifier wavelength band. The MRR modulator was critically coupled with an unbiased notch-depth of 20 dB and Q-factor of 4700. The resonance shift under reverse bias was 23 pm/V with a calculated VπLπ of 2.2 to 2.6 V·cm from -1 to -8 V, respectively. Simulations are in good agreement with the measured data. The experimental modulation bandwidth was 12.5 GHz, limited by the response of the commercial external detector used for this measurement. The DM detector was operated in avalanche mode, had 1.97 µm wavelength responsivities of 0.04 and 0.14 A/W, and had bandwidths greater than 16 and 7.5 GHz at -15 and -30 V biases, respectively. Large-signal measurement demonstrated open eye-diagrams at 5, 10, and 12.5 Gbps for the DM detector and also for an optical link consisting of the modulator and detector integrated on the same silicon chip.

show abstract

Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths

Cited by 4 publications

References 22 publications

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

High-speed performance of a TDFA-band micro-ring resonator modulator and detector

Contact Info

Product

Resources

About