Experimental shift allowance in the deconvolution of SIMS depth profiles

Yunin, P. A.; Drozdov, Yurii Nikolaevich; Дроздов, М. Н.

doi:10.1002/sia.5259

Cited by 13 publications

(13 citation statements)

References 26 publications

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“…An abrupt 10‐nm‐thick layer profile is considered in this section, which we will call “the original profile.” This profile is convolved with the analytical DRF of the MRI model. The DRF parameters are taken from Yunin et al These parameters are typical of the SIMS depth profiling with 2 keV/C s + : w = 2.3 nm, σ = 1.4 nm, λ = 0.3 nm. The DRF used here is calculated for a delta‐layer positioned at z 0 = 7 nm, and it starts at depth z i = 0 nm.…”

Section: Resultsmentioning

confidence: 99%

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Iterative deconvolution using the MRI model for removing experimental broadening and shift effects in SIMS depth profiles

Boulsina

Gautier

2018

Surface & Interface Analysis

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Correspondence Fayçal Boulsina, Département d'électronique et télécommunications, Faculté des sciences et de la technologie, During the last years, depth resolution of secondary ion mass spectrometry (SIMS) has been enhanced, mainly by solving direct and inverse problems of depth profiling. The solution of both problems is based on the depth resolution function (DRF). Solving the direct problem is frequently done by using the DRF of the Mixing-Roughness-Information depth (MRI) model, and solving the inverse problem is frequently achieved by using the DRF proposed by Dowsett and coworkers. However, using the latter may create difficulties in determining the true position of the measured profiles. In this paper, it is proposed to solve iteratively the inverse problem of SIMS depth profiling using the analytical DRF of the MRI model. The iterative deconvolution using the MRI model is tested on theoretical and experimental profiles.It is shown that the proposed procedure is able to provide a non-negligible improvement; the artificial broadening of the measured profiles is clearly reduced, and their shift from the actual positions is corrected.

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Section: Resultsmentioning

confidence: 99%

“…In spite of these advantages, the MRI model is very rarely used by authors that prefer using deconvolution methods. A few authors used it, but only in the case of noniterative deconvolution (see, eg, Yunin et al). This is probably due to the lack of an analytical expression for the MRI model, which has been proposed only recently .…”

Section: Introductionmentioning

confidence: 99%

Iterative deconvolution using the MRI model for removing experimental broadening and shift effects in SIMS depth profiles

Boulsina

Gautier

2018

Surface & Interface Analysis

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“…There are also ways of improving depth resolution on a measured SIMS profile, like profile deconvolution with account for the depth resolution function (DRF) . It is obvious that in our case, the resolution will be getting worse throughout the profiling process because of the instrumental contribution, specifically, an increasing curve of the sputter crater bottom.…”

Section: Introductionmentioning

confidence: 99%

“…Challenging applied problems of the SIMS technique include obtaining high depth resolution along with a high speed of profiling, upgrading of sensitivity to small impurity concentrations, and extending the dynamic range of detection, reducing the size of analyzed areas for an on‐chip microanalysis. A variety of methods has been proposed towards solution of those problems, from technical modernization to further development of experimental techniques to processing of experimental data and special preparation of samples . The commonly used approaches to depth profiling on the conventional equipment fail to meet all of the requirements.…”

Section: Introductionmentioning

confidence: 99%

A new approach to express ToF SIMS depth profiling

Yunin

Drozdov

Дроздов

2015

Surface & Interface Analysis

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aWe propose a new approach to express SIMS depth profiling on a TOF.SIMS-5 time-of-flight mass spectrometer. The approach is based on the instrument capability to independently perform raster scans of sputter and probe ion beams. The probed area can be much smaller than the diameter of a sputter ion beam, like in the AES depth profiling method. This circumstance alleviates limitations on the sputter beam-raster size relation, which are critical in other types of SIMS, and enables analysis on a curved-bottomed sputter crater. By considerably reducing the raster size, it is possible to increase the depth profiling speed by an order of magnitude without radically degrading the depth resolution. A technique is proposed for successive improvement of depth resolution through profile recovery with account for the developing curvature of the sputtered crater bottom in the probed area. Experimental study of the crater bottom form resulted in implementing a method to include contribution of the instrumental artifacts in a nonstationary depth resolution function within the Hofmann's mixing-roughness-information depth model. The real-structure experiment has shown that the analysis technique combining reduction of a raster size with a successive nonstationary recovery ensures high speed of profiling at~100 μm/h while maintaining the depth resolution of about 30 nm at a 5 μm depth.

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“…[38][39][40][41] However, precise quantitative analysis of thin layers is additionally complicated by the shift and broadening of the measured profiles. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] The SIMS depth resolution is limited both by the features of the specimen and the essential influence of the primary sputtering-ion beam. [18,19,26] The SIMS experimental distortions become especially crucial in the analysis of GaN-based HEMT structures with nanometer-thin layers, whose thickness is comparable with the depth resolution.…”

Section: Introductionmentioning

confidence: 99%

Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers

Yunin

Drozdov

Дроздов

et al. 2016

Surf. Interface Anal.

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The possibilities of quantitative secondary ion mass spectrometry (SIMS) depth profiling of Al in AlxGa1 − xN/AlN/GaN transistor heterostructures are shown. Using a series of test structures for a TOF.SIMS‐5 time‐of‐flight mass spectrometer, we obtained a refined linear calibration dependence of the secondary‐ion yield on the composition ×, namely, Y(CsAl+)/Y(CsGa+) = K × x/(1 − x), with a high linear correlation coefficient, Rl = 0.9996, which permits quantitative SIMS analysis of relatively thick AlGaN barrier layers. The method of profile reconstruction with allowance for the main artifacts of ion sputtering has been first applied for the analysis of GaN/AlGaN/AlN/GaN high electron mobility transistor structure. This method permits to perform quantitative analysis of the thickness and composition of a nanometer‐thin AlN sublayer and to estimate the measurement error. For the structure being studied, the AlN sublayer is 1.2 ± 0.2 nm thick. Copyright © 2016 John Wiley & Sons, Ltd.

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Experimental shift allowance in the deconvolution of SIMS depth profiles

Cited by 13 publications

References 26 publications

Iterative deconvolution using the MRI model for removing experimental broadening and shift effects in SIMS depth profiles

Iterative deconvolution using the MRI model for removing experimental broadening and shift effects in SIMS depth profiles

A new approach to express ToF SIMS depth profiling

Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers

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