Experimental studies of single-event effects induced by heavy ions

Influence of edge effects on single event upset susceptibility of SOI SRAMs

“…In fact, the influence of tilted irradiations of heavy ions on the charge collection at PN junctions and SOI transistor has also been investigated by other authors [13][14][15]. The approach of upset correction by cosðhÞ appears to result in different cross-sections for deeper devices for the same effective LET [16][17][18][19]. Petersen et al [20] attributed the inapplicability of upset cross-section corrected by cosðhÞ to the edge effects which is induced by ions through the edge of sensitive region, and proposed an approach to correct the impact of edge effects on upset cross-section at tilted incidence.…”