Experimental study of different silicon sensor options for the upgrade of the CMS Outer Tracker

Adam, W.; Bergauer, T.; Blöch, D.; Brondolin, E.; Dragicevic, M.; Frühwirth, R.; Hinger, V.; Steininger, H.; Treberer-Treberspurg, W.; Beaumont, W. Worby; Croce, D. Di; Janssen, X.; Lauwers, J.; Mechelen, P. Van; Remortel, N. Van; Blekman, F.; Chhibra, S. S.; Clercq, J. De; D’Hondt, J.; Lowette, S.; Marchesini, I.; Moortgat, S.; Python, Q.; Skovpen, K.; Bols, E. S.; Mulders, P. Van; Allard, Yannick; Beghin, D.; Bilin, B.; Brun, H.; Clerbaux, B.; Lentdecker, G. De; Delannoy, H.; Deng, W.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Kalsi, A. K.; Makarenko, I.; Moureaux, L.; Popov, A.; Postiau, N.; Robert, Frédéric; Song, Zixuan; Thomas, L.; Vanlaer, P.; Vannerom, D.; Wang, Q.; Wang, H.; Yang, Yifan; Bondu, O.; Bruno, G.; Caputo, C.; David, P.; Delaere, C.; Delcourt, M.; Giammanco, A.; Krintiras, G.; Lemaı̂tre, V.; Magitteri, A.; Piotrzkowski, K.; Saggio, A.; Szilasi, N.; Marono, M. 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doi:10.1088/1748-0221/15/04/p04017

Cited by 5 publications

(3 citation statements)

References 20 publications

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“…Displayed in figure 8(b), high levels of 𝑅 int (𝜌 int ) are maintained throughout the investigated reverse bias 𝑉-range (𝑉 bias = 0 − 1 kV), for the 'standard' value of 𝑝-stop peak doping (STD 𝑁 ps ) and regardless of the 𝑝-stop configuration. Both the voltage dependence and absolute values of 𝜌 int are in close agreement with previously reported experimental results of X-ray [15] and reactor [32,33] irradiated strip-sensors, while the gradual decay of measured 𝑅 int with fluence is also reproduced. By excluding 𝑁 it,don and 𝑁 it,acc from the simulation, the strips become either shorted (STD 𝑁 ps , 𝑁 it = 0 in figure 8(b)) for all voltages or reach isolation only above 500 V of 𝑉 bias for an extreme value of 𝑝-stop peak doping (5 × STD 𝑁 ps , 𝑁 it = 0).…”

Section: Results After N/𝜸-and 𝜸-Irradiationssupporting

confidence: 90%

Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors

Akchurin,

Altopp,

Burkle

et al. 2023

J. Inst.

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Surface damage caused by ionizing radiation in SiO2 passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to the Si/SiO2-interface. High density positive interface net charge can be detrimental to the operation of a multi-channel n-on-p sensor since the inversion layer generated under the Si/SiO2-interface can cause loss of position resolution by creating a conduction channel between the electrodes. In the investigation of the radiation-induced accumulation of oxide charge and interface traps, a capacitance-voltage characterization study of n/γ- and γ-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed that close agreement between measurement and simulation were possible when oxide charge density was complemented by both acceptor- and donor-type deep interface traps with densities comparable to the oxide charges. Corresponding inter-strip resistance simulations of a n-on-p sensor with the tuned oxide charge density and interface traps show close agreement with experimental results. The beneficial impact of radiation-induced accumulation of deep interface traps on inter-electrode isolation may be considered in the optimization of the processing parameters of isolation implants on n-on-p sensors for the extreme radiation environments.

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Section: Results After N/𝜸-and 𝜸-Irradiationssupporting

confidence: 90%

Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors

Akchurin,

Altopp,

Burkle

et al. 2023

J. Inst.

Self Cite

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“…For scenarios up to and beyond 4000 fb −1 , an increase to an operation voltage of 800 V would allow FZ290 to maintain adequate performance even at the most exposed locations. Beam test performance of strip sensors prototype are described in [11], [12]. An overview of the seed signal as a function of annealing time for the strip sensors after irradiation to the maximum expected fluences is shown in Fig.…”

Section: Outer Tracker Systemmentioning

confidence: 99%

The Upgrade of the CMS Tracker at HL-LHC

Rosa

2021

Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)

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In the high luminosity scenario of the LHC (HL-LHC), which will bring the instantaneous luminosity up to 7.5 × 10 34 cm −2 s −1 , ATLAS and CMS will need to operate at up to 200 interactions per 25 ns beam crossing and reaching up to 4000 fb −1 of integrated luminosity. To achieve their physics goals the experiments will need to improve the tracking and vertexing capability and the ability to selectively trigger on specific physics events at reasonable thresholds. The upgrade of the CMS Tracker requires designing new inner and outer tracking detectors to cope with the increased luminosity and to implement first trigger level functionality. This paper describes the new layout and the technological choices together with some highlights of research and development activities.

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“…The FDV values were determined from measurements of the sensor capacitance as a function of the bias voltage. The linear parts of the curve were interpolated by lines and their intersections indicated FDV (see figure 3b) [16,17]. Figure 4 represents the dependence of the FDV on Φ n eq and TID.…”

Section: Full Depletion Voltagementioning

confidence: 99%

Radiation hardness of PantherPix hybrid pixel detector

et al. 2021

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Hybrid pixel detectors (HPD) are nowadays well known and widely used in fundamental research, e.g. in high energy physics experiments. Over the last decade, segmented semiconductor detectors have also found use in medicine. The total doses received by medical radiation detectors often reach a significant level (up to several hundreds of kGy per decade), especially in applications such as transmission portal in-vivo dosimetry. Such doses might affect detector properties. Therefore, it is necessary to evaluate their performance after absorbing a significant radiation dose. PantherPix is a novel 2D hybrid pixel detector which is designed specifically for use in radiation therapy. As was concluded in earlier studies, it is suitable for radiotherapy quality assurance (QA) and portal dosimetry. In this paper, the PantherPix radiation hardness is investigated using a 60Co source. The dependence on dose of the full depletion voltage, leakage current, detector power consumption and detector response are provided. The PantherPix radiation tolerance has been shown to be adequate for common cumulative doses delivered to radiation detectors in radiotherapy over several decades and its performance has been verified for doses up to 3000 kGy.

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Experimental study of different silicon sensor options for the upgrade of the CMS Outer Tracker

Cited by 5 publications

References 20 publications

Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors

Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors

The Upgrade of the CMS Tracker at HL-LHC

Radiation hardness of PantherPix hybrid pixel detector

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Experimental study of different silicon sensor options for the upgrade of the CMS Outer Tracker

Cited by 5 publications

References 20 publications

Modeling of surface damage at the Si/SiO2-interface of irradiated MOS-capacitors

Modeling of surface damage at the Si/SiO2-interface of irradiated MOS-capacitors

The Upgrade of the CMS Tracker at HL-LHC

Radiation hardness of PantherPix hybrid pixel detector

Contact Info

Product

Resources

About

Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors

Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors