Experimental validation of the ‘FLoating Islands’ concept: 95 V breakdown voltage vertical FLIDiode

Novel FLI/ODBR based LDMOSFET: A 2-D simulation study

“…The device structure of the conventional LDMOSFET along with the L various dimensions as obtained from PISCES-II is indicated in Fig.1.This structure is modified by inserting an oppositely doped floating layer with in the drift region of the device as shown in Fig.2. The proposed device could be fabricated in a standard LDMOSFET compatible process with multi-epitaxial process, which has been performed successfully recently [8]- [10].…”

“…Recently many power MOSFET configurations have been proposed by the researchers through out the world for improving the specific on-resistance w.r.t. breakdown voltage such as P [9] and P-buried layer Schottky barrier diode [10]. The ODBR and FLIMOSFET devices are based on the concept that the triangular electric field distribution in the bulk is divided into several sections to decrease the magnitude of the peak electric field by inserting electrically oppositely doped floating buried layer in the drift region of the device.…”

“…for silicon, breakdown electric field ~ 3*10 5 V/cm) leading to reduce the on-resistance of the device proportionately. Recently such type of devices have been fabricated and experimentally validated successfully [8]- [9] using multi-epitaxial technology [9]- [10], which is less complex and less expansive than the super junction (SJ)/ COOLMOS TM device technology.…”

Effect of floating island thickness and doping concentration in power FLIMOS: 2-D simulation study

“…The influence of the conduction section 'L' (Fig. 3) on the FLiMOS's voltage handling capability is presented in [9]. V br degrades with the increase of number of floating islands [7].…”