Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model

März, Andreas; Bertelshofer, Teresa; Horff, Roman; Helsper, Martin; Bakran, Mark-M.

doi:10.1109/epe.2016.7695287

Cited by 13 publications

(9 citation statements)

References 10 publications

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“…8) is much thinner and narrower compared to Si devices, thanks to the SiC material properties, which in turn allows for higher power densities. Thus, the energy density is relatively higher and the junction temperature during SC can even reach 1000 K [13]. The heat dissipation is slower than the leakage current increasing rate.…”

Section: Thermal Runaway Failurementioning

confidence: 99%

“…Table III reports the contributions given in the latest years. In [12] a rather complete physical modeling of the drain leakage current temperature-dependent behavior is given, while in [13] a thermal network is used to simulate the temperature distribution during SC. The studies carried out in [15] and [18] are based on 2D FEM numerical approaches and focus on the thermal runaway failure mode.…”

Section: Modeling Activitymentioning

confidence: 99%

“…Nevertheless, the results are rather scattered and sometimes disagreeing. Table I reports a list of the components, which have been tested under SC in the literature [5]- [13]. A chart of the SC withstanding time (SCWT) and the relative critical energy, i.e.…”

Section: Introductionmentioning

confidence: 99%

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A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Ceccarelli

Reigosa

Iannuzzo

et al. 2017

Microelectronics Reliability

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The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

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Section: Thermal Runaway Failurementioning

confidence: 99%

Section: Modeling Activitymentioning

confidence: 99%

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A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Ceccarelli

Reigosa

Iannuzzo

et al. 2017

Microelectronics Reliability

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“…6. The same method was used and validated in [20]. The thermal network coefficients for the drift region can be obtained as each element can be obtained by means of the following equations:…”

Section: Thermal Modelmentioning

confidence: 99%

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

Ceccarelli

Reigosa

Bahman

et al. 2017

IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society

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A novel physics-based, electro-thermal model which is capable of estimating accurately the short-circuit behavior and thermal instabilities of silicon carbide MOSFET multi-chip power modules is proposed in this paper. The model has been implemented in PSpice and describes the internal structure of the module, including stray elements in the multi-chip layout, self-heating effect, drain leakage current and threshold voltage mismatch. A lumped-parameter thermal network is extracted in order to estimate the internal temperature of the chips. The case study is a half-bridge power module from CREE with 1.2 kV breakdown voltage and about 300 A rated current. The short-circuit behavior of the module is investigated experimentally through a non-destructive test setup and the model is validated. The estimation of overcurrent and temperature distribution among the chips can provide useful information for the reliability assessment and fault-mode analysis of a new-generation SiC high-power modules.

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“…Simulations [29,33,34,35] have shown that during a short-circuit test, the temperature of the surface of the die can rise well above the melting point of aluminium (660 °C). The optical study of our samples showed that the top-side metallisation layers of all dies had melted (Fig.…”

Section: 33mentioning

confidence: 99%

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam

Pascal

Labrousse

Petit

et al. 2018

Microelectronics Reliability

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A Printed Circuit Board (PCB)-embedding process using pressed metal foam to connect the top-side pads of power dies is considered. The manufacturing process, simple and highly cost-effective, is described in detail; samples are manufactured and their reliability and robustness are characterised. It is shown that thermally cycled prototypes exhibit reliability close to that of Direct Bounded Copper (DBC) substrates. Samples submitted to 150 A-surges have highly scattered reliability. SiC MOSFETs submitted to destructive current limiting tests and repetitive short-circuit tests performed similarly to dies reported in TO247 packages. A discussion on the development of reliability-assessment-methods, especially suited for PCB-embedding processes, is proposed.

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Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model

Cited by 13 publications

References 10 publications

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam

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