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This article presents a numerical method in combination with a device simulation model used to analyse the parallel connection of several silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) dies. Parallel connection is necessary to achieve the desired current carrying capability of the main inverters for xEV-drives. With this method, the effect of asymmetries within the chips' parameters, especially the gate threshold voltage, is investigated. The investigation results quantify to what extent the positive temperature coefficient of the on-state resistance can mitigate the overheating of one chip caused by switching loss imbalance. The results are used to define the necessary derating of the inverter output power so that no single chip is thermally overstressed.

The chemistry of dicationic diboranes with two BII atoms that are engaged in direct B−B bonding is by enlarge unexplored, although these molecules have intriguing properties due to their combined Lewis acidic and electron‐donor properties. Unsymmetric dicationic diboranes are extremely rare, but especially attractive due to their polarized B−B bond. In this work we report the directed synthesis of several stable unsymmetric dicationic diboranes by reaction between the electron‐rich ditriflato‐diborane B2(hpp)2(OTf)2 (hpp=1,3,4,6,7,8‐hexahydro‐2H‐pyrimido[1,2‐α]pyrimidinate) and phosphino‐pyridines, establishing B−N and B−P bonds with the diborane concomitant with triflate elimination. In the case of 2‐((ditertbutylphosphino)methyl)pyridine, the B−N bond is formed instantly, but the B−P bond formation requires (due to steric constraints) several days at ambient conditions for completion, creating an intermediate that could be used for frustrated Lewis pair (FLP)‐like chemistry. Here we test its reaction with an aldehyde, and propose a new type of FLP‐like chemistry.