2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) 2015
DOI: 10.1109/epe.2015.7309102
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Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode

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Cited by 15 publications
(8 citation statements)
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“…11 represents the turn-on, the turn-off and the recovery energy losses (Eon, Eoff and Erec respectively) as a function of the load's current, all for TJ = 25°C and 100°C. It can be seen that Erec is largely lower than the other switching energies and seems to confirm the results proposed in [16][17][18].…”
Section: B Losses Estimationsupporting
confidence: 87%
See 1 more Smart Citation
“…11 represents the turn-on, the turn-off and the recovery energy losses (Eon, Eoff and Erec respectively) as a function of the load's current, all for TJ = 25°C and 100°C. It can be seen that Erec is largely lower than the other switching energies and seems to confirm the results proposed in [16][17][18].…”
Section: B Losses Estimationsupporting
confidence: 87%
“…Usually, these energy losses are given in the datasheet, however Erec is not provided for this power module. Despite this, the reverse recovery energy of the MOSFET's body diode was found to be low in several recent studies [16][17][18]. Hence in order to verify this theory and obtain more accurate values of Eon and Eoff, the double pulse test was applied.…”
Section: B Losses Estimationmentioning
confidence: 99%
“…Moreover, the current I C will be distributed between the SiC MOSFET T2 and the SBD diode D2. The current distribution will depend on the ON resistance (R DS ) of the MOSFET, the forward voltage drop of the SiC SBD diode (V F ) and the diode dynamic resistance (R F ) [37]. Indeed the described switching operation is very different from what is seen in the 3L silicon-based topology.…”
Section: L Asym-voltage Level Generation and Output Currentmentioning
confidence: 98%
“…A SiC SBD has a relatively low forward voltage drop and almost no reverse recovery charge. Embedded PiN diodes in SiC MOSFETs can also be used as freewheeling diodes, but they have a large forward voltage drop and a large reverse recovery Materials 2021, 14, 3554 2 of 13 charge and time; therefore, power module systems with SiC SBDs result in better switching losses [11].…”
Section: Introductionmentioning
confidence: 99%