Explicit connection between sample geometry and Hall response

Oliver, Paul; Cornils, M.

doi:10.1063/1.3272267

Cited by 35 publications

(12 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Usually, the output voltage V out of a Hall sensor is the superposition of the magnetic field B dependent signal, i.e., the Hall voltage V Hall , and an offset voltage V off , namely [5,6] off A off Hall out…”

Section: Introductionmentioning

confidence: 99%

Novel compact two-dimensional CMOS vertical Hall sensor

Sander

Leube

Oliver

2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

View full text Add to dashboard Cite

We report a novel compact CMOS sensor enabling the measurement of both in-plane magnetic field components B x and B y at the same location. The sensor consists of four nwells arranged essentially as a square and electrically interconnected into a conducting loop. Four contacts, one at the center of each n-well, serve as drive and sense contacts. The sensing principle is the same as in established vertical Hall sensors. By selectively switching the interconnections among the n-wells, the device is made sensitive alternatingly to B x and B y . The sensitivity for both directions is about 5.6 mV/VT. At a nominal B field of 3.7 mT the RMS error of the measured magnitude and angle of B are 56 µT and 0.8°, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

Novel compact two-dimensional CMOS vertical Hall sensor

Sander

Leube

Oliver

2015

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

View full text Add to dashboard Cite

show abstract

“…This model differs from other modeling approaches [6][7][8] (finite element modeling, lumped circuit ...) by its relative simplicity: it consists in 10 non-linear resistors and it is tuned through 14 parameters (7 of them being related to the geometry, 5 to the technology, and 2 are fitting parameters) [5]. Among all physical effects that alter the response of the sensor, the zero-tesla offset is one of the most critical [9]. It can be induced by different phenomena: deviation of technological parameters, misalignment of contacts, gradients of doping, mechanical stress on the chip, etc.…”

Section: Introductionmentioning

confidence: 98%

Compact modeling of offset sources in vertical hall-effect devices

Madec

Osberger

Schell

et al. 2014

2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)

View full text Add to dashboard Cite

Vertical Hall-effect devices are CMOS integrated sensors designed for the measurement of magnetic field in the plane of the chip. In such devices, systematic offset is a major issue which limits their performance. We recently developed a design-oriented compact model for such devices. In this paper, the model is improved and used to study the main features of the offset. There are two main phenomena that induce offset in the sensor: sensor imperfections (process deviation, mechanical stress …) which can be modeled by contact misalignments, and the modulation of the space charge region at the N-well/P-sub junction. Offset is modeled through 4 parameters which are extracted from offset measurement, and the model is validated with experimental results.

show abstract

“…(2), we use an approach similar to that of Paul and Cornils [12]. We now consider a 2D region with an insulating boundary ω (shown in Fig.…”

Section: Appendixmentioning

confidence: 99%

“…The notion of 1D-like transport or quasi-1D current transport represents the situation when the resistance ratio approaches 1, i.e., the expected result for a 1D conductor or wire measurement [7,8]. For measurements on an inhomogeneous material, the sensitivity (or weighting function) of four-point resistance to small perturbations in the local transport properties has been studied both numerically [10][11][12][13] and analytically [14]. Similar studies have been conducted for finite point-like perturbations to include nonlinear effects on the sensitivity [15,16], but the situation is different for highly nonuniform materials with extended insulating defects.…”

Section: Introductionmentioning

confidence: 99%

Sensitivity analysis explains quasi-one-dimensional current transport in two-dimensional materials

et al. 2014

View full text Add to dashboard Cite

We demonstrate that the quasi-one-dimensional (1D) current transport, experimentally observed in graphene as measured by a collinear four-point probe in two electrode configurations A and B, can be interpreted using the sensitivity functions of the two electrode configurations (configurations A and B represents different pairs of electrodes chosen for current sources and potential measurements). The measured sheet resistance in a four-point probe measurement is averaged over an area determined by the sensitivity function. For a two-dimensional conductor, the sensitivity functions for electrode configurations A and B are different. But when the current is forced to flow through a percolation network, e.g., graphene with high density of extended defects, the two sensitivity functions become identical. This is equivalent to a four-point measurement on a line resistor, hence quasi-1D transport. The sensitivity analysis presents a formal definition of quasi-1D current transport, which was recently observed experimentally in chemical-vapor-deposition graphene. Our numerical model for calculating sensitivity is verified by comparing the model to analytical calculations based on conformal mapping of a single extended defect.

show abstract

Explicit connection between sample geometry and Hall response

Cited by 35 publications

References 21 publications

Novel compact two-dimensional CMOS vertical Hall sensor

Novel compact two-dimensional CMOS vertical Hall sensor

Compact modeling of offset sources in vertical hall-effect devices

Sensitivity analysis explains quasi-one-dimensional current transport in two-dimensional materials

Contact Info

Product

Resources

About