ICECS'99. Proceedings of ICECS '99. 6th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.99EX357)
DOI: 10.1109/icecs.1999.812259
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Exploiting hysteresis in a CMOS buffer

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Cited by 7 publications
(9 citation statements)
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“…Maintaining the same segment delay D1, the length of the line segment can be increased since the signal has to only reach the low threshold voltage of an HDR buffer [5]. A consequence of this capability is that the line can be partitioned into only g segments with g smaller than k. The delay of the HDR buffer DHDR must also be minimized to minimize Dh.…”
Section: '(2)mentioning
confidence: 97%
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“…Maintaining the same segment delay D1, the length of the line segment can be increased since the signal has to only reach the low threshold voltage of an HDR buffer [5]. A consequence of this capability is that the line can be partitioned into only g segments with g smaller than k. The delay of the HDR buffer DHDR must also be minimized to minimize Dh.…”
Section: '(2)mentioning
confidence: 97%
“…The efficiency of the line driven by the TR buffers can be further improved if the TR buffers incorporate low switching threshold voltages as in an HDR buffer [5]. If these low switching threshold voltage TR buffers drive a highly resistive RC line as shown in Fig.…”
Section: Dtn = Dl(k + P)mentioning
confidence: 98%
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