Exploring an Approach toward the Intrinsic Limits of GaN Electronics

Abstract

To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach toward the intrinsic limits of GaN electronics from the perspective of epitaxial growth. By using a novel two-dimensional growth mode benefiting from our high-temperature AlN buffer technology, which is different from the classic two-step growth approach, our high-electron-mobility transistors (HEMTs) demonstrate an extremely high breakdown field of 2.5 MV/cm approaching the theoretical limit of GaN and an extremely low off-state buffer leakage of 1 nA/mm at a bias of up to 1000 V. Furthermore, our HEMTs also exhibit an excellent figure-of-merit (V br 2/R on,sp) of 5.13 × 108 V2/Ω·cm2.

Performance Analysis of MOS-HEMT as a Biosensor: A Dielectric Modulation Approach

“…The recombination effect is accounted for SRH, while the low field mobility effects accounted for albrct. n. The simulation models and methods depict a good agreement with the experimentally measured response of [23], as shown in figure 2. The dimensions used for simulation are the same as experimental.…”

Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth

“…An AlGaN/GaN HEMT template is first grown on a c -plane sapphire substrate using our high-temperature AlN buffer technology by the metalorganic vapor-phase epitaxy (MOVPE) method. − Afterwards, a 500 nm SiO 2 layer is deposited by plasma-enhanced chemical vapor deposition (PECVD). After standard photolithography processes for mask patterning, ICP dry etching is employed to etch the SiO 2 layer into microhole arrays.…”

Monolithically Integrated μLEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach

“…Using our high temperature AlN buffer approach, our HEMTs have demonstrated an extremely high breakdown field and an extremely low leakage current. [ 27 ] Such a HEMT structure can electrically drive individual μLEDs without concerning about leakage current which may unintentionally turn on μLEDs which are supposed to be off. For the details of our HEMT structure, please refer to our paper recently published elsewhere.…”

“…For the details of our HEMT structure, please refer to our paper recently published elsewhere. [ 27 ]…”

“…For the details of our HEMT structure, please refer to our paper recently published elsewhere. [27] Subsequently, a SiO 2 film with a thickness of 500 nm is deposited on the HEMT template by using a plasma-enhanced chemical vapor deposition (PECVD) technique. A photolithography technique and then drying etching processes are used to selectively etch the SiO 2 mask down to the surface of the HEMT template, forming regularly arrayed microholes with a diameter of 20 μm.…”