2021
DOI: 10.1002/pssr.202000394
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Exploring Phase‐Change Memory: From Material Systems to Device Physics

Abstract: To deal with the growing demand for data storage and processing, phase‐change memory (PCM) provides one of the most promising candidates for next‐generation nonvolatile data storage and neuromorphic computing applications. A lot of effort has been made toward optimizing the materials and device design; thus, excellent device performances have been achieved including high density, fast switching speed, great endurance, and retention. In addition, the widely tunable optical characteristics of PCMs are irresistib… Show more

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Cited by 11 publications
(9 citation statements)
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References 155 publications
(228 reference statements)
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“…Consequently, the development of novel devices is paramount for the advancement of neuromorphic computing. At present, various devices have been developed to realize brain-inspired computing, represented by resistive switching devices and neuromorphic transistors [14][15][16][17][18]. In terms of device functions, neurons, and synaptic behaviors have been successfully simulated.…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, the development of novel devices is paramount for the advancement of neuromorphic computing. At present, various devices have been developed to realize brain-inspired computing, represented by resistive switching devices and neuromorphic transistors [14][15][16][17][18]. In terms of device functions, neurons, and synaptic behaviors have been successfully simulated.…”
Section: Introductionmentioning
confidence: 99%
“…[9,10] At the same time, aggressive requirements on processing energy and real-time response require a new computing paradigm with possible new devices and architecture. [11][12][13][14] Therefore, researchers are exploring nextgeneration memory computing devices with nonvolatile memory behavior, like ferroelectric resistive memory devices, [15][16][17] phase-change resistive memory devices, [18][19][20] and magnetic resistive memory devices. [21][22][23] Later in the 1970s, Leon Chua introduced a new memory element called memristor and considered a fourth fundamental passive circuit element.…”
Section: Introductionmentioning
confidence: 99%
“…In this framework, several neuromorphic spiking neural networks (SNNs) based on CMOS technology have been proposed, demonstrating VLSI synaptic circuits with homeostatic neurons (Bartolozzi and Indiveri, 2006 ; Chicca et al, 2014 ; Qiao et al, 2017 ) and reward-based decision-making circuits (Wunderlich et al, 2019 ; Yan et al, 2019 ). At the same time, non-volatile memory devices, such as phase change memory (PCM), have raised considerable interest as promising synaptic connections for neuromorphic computation, thanks to the 3D stacking capability, the low-voltage operation and the ability to serve as embedded non-volatile memory in computing systems (Suri et al, 2012 ; Xu et al, 2020 ; Ren et al, 2021 ). In particular, PCMs have recently demonstrated outstanding multi-level capability (Kuzum et al, 2013 ; Ren et al, 2021 ), which enables continual learning in neural networks (Bianchi et al, 2019 ; Muñoz-Martín et al, 2019 ) and decision making in brain-inspired cognitive systems (Eryilmaz et al, 2014 ).…”
Section: Introductionmentioning
confidence: 99%
“…At the same time, non-volatile memory devices, such as phase change memory (PCM), have raised considerable interest as promising synaptic connections for neuromorphic computation, thanks to the 3D stacking capability, the low-voltage operation and the ability to serve as embedded non-volatile memory in computing systems (Suri et al, 2012 ; Xu et al, 2020 ; Ren et al, 2021 ). In particular, PCMs have recently demonstrated outstanding multi-level capability (Kuzum et al, 2013 ; Ren et al, 2021 ), which enables continual learning in neural networks (Bianchi et al, 2019 ; Muñoz-Martín et al, 2019 ) and decision making in brain-inspired cognitive systems (Eryilmaz et al, 2014 ).…”
Section: Introductionmentioning
confidence: 99%
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