“…SnO 2 , a IV-VI semiconductor, is used as a UV detection material due to a variety of merits such as its suitable bandgap (3.6-4.0 eV) [7,21], high chemical stability, high electron mobility [22], etc. These characteristics make it suitable for many intriguing applications such as in batteries [23,24], sensors [25,26], catalysis [27,28], solar cells [22,29], water purification [7,30,31], and biomedical applications [32,33]. Moreover, the bandgap energy of SnO 2 has great potential for bridging the bandgap space between BP (0.3-2.0 eV) [1,11], and hexagonal boron nitride (5.0-6.0 eV) [34].…”