Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

Katchkanov, V.; Mosselmans, J. Frederick W.; O’Donnell, K. P.; Nogales, E.; Hernández, S.; Martin, Robert; Steckl, A. J.; Lee, D.S.

doi:10.1016/j.optmat.2005.09.023

Cited by 9 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…with 4 nitrogen atoms as nearest neighbors, 12 Ga-atoms in the second, 10 N-atoms in the third and 6Ga atoms in the fourth neighbor shells. The first neighbor shell is strongly distorted (by ~11% with an Eu-N nearest neighbor distance of 2.15 Å compared to a Ga-N nearest neighbor distance of 1.94 Å in pure GaN) as expected, due to the large effective ionic radius of Eu 3+ (linearly estimated to 83.5 pm) compared to Ga 3+ (61 pm) in tetrahedral environment66 and in good agreement with previous studies on rare earth doped GaN and other III-N alloys61,62,67,68 . The more distant shells are found close to the expected positions in undisturbed GaN (with a Eu-Ga next-nearest neighbour distance of 3.17 Å compared to a Ga-Ga nearest neighbor distance of 3.18 Å in GaN).…”

supporting

confidence: 90%

Incorporation of Europium into GaN Nanowires by Ion Implantation

et al. 2019

Self Cite

View full text Add to dashboard Cite

Rare earth (RE) doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility and small dimension of the NW host, are promising building blocks for future nanoscale devices in optoelectronics and quantum technologies. Europium doping of GaN NWs was performed by ion implantation and structural and optical properties were assessed in comparison to thin film reference samples. Despite some surface degradation for high implantation fluences, the NW core remains of high crystalline quality with lower concentrations of extended defects than observed in ion implanted thin films. Strain introduced by implantation defects is efficiently relaxed in NWs and the measured deformation stays much below that in thin films implanted in the same conditions. Optical activation is achieved for all samples after annealing and, while optical centres are similar in all samples, Eu 3+ emission from NW samples is shown to be less affected by residual implantation damage than for the case of thin films. The incorporation of Eu in GaN NWs was further investigated by nano-cathodoluminescence and X-ray absorption spectroscopy (XAS). Maps of the Eu-emission intensity within a single NW agree well with the Eu-distribution predicted by Monte Carlo simulations suggesting that no pronounced Eu-diffusion takes place. XAS shows that 70-80% of Eu is found in the 3+ charge state while 20-30% is 2+ attributed to residual implantation defects. A similar local environment was found for Eu in NWs and thin films: for low fluences, Eu is mainly incorporated on substitutional Ga-sites while for high fluences XAS points at the formation of a local EuN-like next neighbour structure. Results reveal the high potential of ion implantation as a processing tool at the nano-scale.

show abstract

supporting

confidence: 90%

Incorporation of Europium into GaN Nanowires by Ion Implantation

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

“…Similar behavior has been reported in the literature in the case of Er doped GaN films 8 with Er content lower than 0.4%. 4,28 In these studies, the Er-N distance was found equal to 2.14 to 2.23 Å, revealing that the Er-N distance is mainly determined, in both AlN and GaN, by the size of the Er atom and molecular orbital formation constraints. The reported Er-Ga distance in the Er-doped GaN was 3.23-3.26 Å i.e.…”

Section: Resultsmentioning

confidence: 78%

“…It appears that the concentration quenching of AlNO:Er is due to different mechanisms than the ones encountered in GaN:Er, confirming previous observations by other authors. 3 Whereas the efficiency of the latter (and the electroluminescent devices to come) seems to be limited by the finite solubility of Er in GaN, as attested by the formation of Er rich nitrides or clusters, 4 AlNO:Er appears to form a solid solution over the quoted range.…”

Section: Introductionmentioning

confidence: 99%

Extended X-ray absorption fine structure study of the Er bonding in AlNO:Erx films with x ≤ 3.6%

Katsikini

Katchkanov

Boulet

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

This version is available at https://strathprints.strath.ac.uk/64845/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the

show abstract

“…Bond lengths of the 1st and the 2nd nearest-neighbor shells of the GaDyN layer are 2.24Å and 3.302Å, respectively. These lengths are larger comparing with that of GaN (1.95Å and 3.18Å, respectively) and similar values such as Er doped GaN (2.23Å and 3.26Å respectively) [7]. In comparison, bond length of Dy metal is 3.562Å and those of DyN are 2.411Å and 3.478Å respectively.…”

Section: Resultsmentioning

confidence: 67%

Growth and Characterization of GaDyN/AlGaN Multi-Quantum Well Structures

Nakatani

Zhou

Sano

et al. 2012

e-J. Surf. Sci. Nanotechnol.

View full text Add to dashboard Cite

GaDyN single layer and GaDyN/AlGaN multi-quantum well (MQW) structures are grown on GaN templates by radio-frequency plasma-assisted molecular-beam epitaxy (RF-MBE). X-ray diffraction θ/2θ scan curves exhibited well-defined satellite peaks for the MQW structure samples. From analyzing extended x-ray absorption fine structure (EXAFS), majority of Dy atoms are found to be incorporated into substituting the Ga sites in the GaDyN with wurtzite structure, which has longer bond length than that of GaN. The lattice constant of the GaDyN is larger than that of GaN due to large radius of Dy ion. Two photoluminescence excitation bands are found at 342 and 581 nm, which are identified as the band-to-band transition in the GaDyN quantum wells and the inner-4f transition of Dy 3+ ions, respectively. Ferromagnetism is confirmed in the magnetization versus magnetic field curves at 10 and 300 K for the both structure samples. It is found that the MQW sample has larger magnetic moment than the single layer sample. This enhancement of magnetic moment is realized due to a strong exchange interaction between confined electrons and Dy ions.

show abstract

Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

Cited by 9 publications

References 11 publications

Incorporation of Europium into GaN Nanowires by Ion Implantation

Incorporation of Europium into GaN Nanowires by Ion Implantation

Extended X-ray absorption fine structure study of the Er bonding in AlNO:Erx films with x ≤ 3.6%

Growth and Characterization of GaDyN/AlGaN Multi-Quantum Well Structures

Contact Info

Product

Resources

About