2016
DOI: 10.1016/j.egypro.2016.07.034
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Extraction of Recombination Properties from Lifetime Data

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Cited by 8 publications
(3 citation statements)
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“…23 (see also Ref. 24), improve as iV oc improves, justifying the use of iV oc as the main metric in this letter. Dynamic SIMS was performed using a Cameca IMS 7f instrument with low-energy 1.5 keV O 2 þ primary ions for improved depth resolution, and profiles were quantified with implanted Si standards.…”
mentioning
confidence: 57%
“…23 (see also Ref. 24), improve as iV oc improves, justifying the use of iV oc as the main metric in this letter. Dynamic SIMS was performed using a Cameca IMS 7f instrument with low-energy 1.5 keV O 2 þ primary ions for improved depth resolution, and profiles were quantified with implanted Si standards.…”
mentioning
confidence: 57%
“…By analyzing the injection-dependent carrier lifetime 𝜏(Δn), the contact recombination parameter (J 0c ) and the implied open-circuit voltage (iV OC , which is similar to the quasi-Fermi level splitting) at one sun can be determined. [50,51] The results of PCD measurements are shown in Figure 2a, and its extracted parameters are summarized in Table 1. The results show no significant change after 2PACz deposition on the a-Si:H(i)/c-Si/a-Si:H(i) structure.…”
Section: Resultsmentioning
confidence: 99%
“…Suns V oc provides the light current-voltage characteristics of the diode without the effects of series resistance [38]. This is calculated as given in [41] …”
Section: Simulation Resultsmentioning
confidence: 99%