Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

Bertling, Karl; Rakić, Aleksandar D.; Yeow, Y.T.; Brawley, A.; Domyo, H.; Rotella, F.M.

doi:10.1049/el.2010.0922

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…SOS does not exhibit such a non-linear behavior, thereby exhibiting a higher high-frequency performance than bulk Si. Wireless radio frequency (RF) applications are a prime example of a contemporary technology that benefits from SOS 5 – 7 . Despite the significant advantages of SOS, the high cost of sapphire substrates and the presence of defects have challenged their commercial development 8 , 9 .…”

Section: Introductionmentioning

confidence: 99%

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Lee

Yum

Larsen

et al. 2017

Sci Rep

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Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

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Section: Introductionmentioning

confidence: 99%

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Lee

Yum

Larsen

et al. 2017

Sci Rep

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“…Extraction of circuit elements ( Fig. 1) was performed by minimising the difference between the simulated S-parameters from the equivalent circuit and measured S-parameters, simultaneously over the entire measurement frequency range [3].…”

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confidence: 99%

Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements

Boubals

Bertling

Domyo

et al. 2010

2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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Comparison of SOS MOSFET's Equivalent Circuit Parameters Extracted From $LCR$ Meter and VNA Measurement

Bertling

Rakić

Yeow

et al. 2012

IEEE Trans. Electron Devices

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Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

Cited by 3 publications

References 11 publications

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements

Comparison of SOS MOSFET's Equivalent Circuit Parameters Extracted From $LCR$ Meter and VNA Measurement

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