2020
DOI: 10.1109/led.2020.3032442
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Extraction Technique for Flat Band Voltage Using Multi-Frequency CV Characteristics in Amorphous InGaZnO Thin-Film-Transistors

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“…Then, by using a multifrequency C – V measurement, we extracted the DOS values versus energy from the conduction band as shown in Figure d–f. The step-by-step procedure for calculating DOS values is shown in the Supporting Information. , As a result, the TFT placed on the third layer, which received the least heat throughout the procedure, exhibits a flat curve at the subgap region in DOS versus energy from the conduction band curve. On the other hand, the relative increase of DOS values was confirmed in the subgap region for the first and second layers of M3D TFTs.…”
Section: Resultsmentioning
confidence: 99%
“…Then, by using a multifrequency C – V measurement, we extracted the DOS values versus energy from the conduction band as shown in Figure d–f. The step-by-step procedure for calculating DOS values is shown in the Supporting Information. , As a result, the TFT placed on the third layer, which received the least heat throughout the procedure, exhibits a flat curve at the subgap region in DOS versus energy from the conduction band curve. On the other hand, the relative increase of DOS values was confirmed in the subgap region for the first and second layers of M3D TFTs.…”
Section: Resultsmentioning
confidence: 99%
“…The stable anticlockwise hysteresis under the DC sweep of the TFT indicated that there existed active ion movement in the dielectric layer driven by the applied electric field. 33,34 Another evidence of the ion movement in the dielectric layer was the flat band voltage ( V FB ) shift and slope change in the gate–source capacitance ( C GS ) measurements in the V GS sweep in the range of −5–5 V. 35,36 The schematic of the configuration and results of the C GS measurement are shown in Fig. S5 (ESI†).…”
Section: Results and Analysismentioning
confidence: 99%