Extrinsic photoluminescence from InGaAs/GaAs pseudomorphic single quantum wells

Devine, R. L. S.; Moore, W. T.

doi:10.1016/0038-1098(88)90578-9

Cited by 3 publications

(3 citation statements)

References 19 publications

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“…We first consider the extrinsic luminescence in the InGaAs strained QWS. Recently we have examined extrinsic luminescence in InGaAs strained SQWS over a range of well widths [12]. A curious observation was the relative weakness of the extrinsic peak, even at low intensities.…”

Section: Extrinsic Luminesczncementioning

confidence: 99%

“…Finally, we consider the effect of non-radiative recombination on the luminescence from the InGaAs QWS. The large exciton densities obtainable in these SOWS at moderate excitation intensity [7] suggests that the nonradiative recombination rate (&) is low. Further evidence for this is obtained from examination of a QW ( L , = 30 nm, xIn-0.08) which has its middle third doped with Be acceptors.…”

Section: Non-radiative Recombinationmentioning

confidence: 99%

“…obviously the strained single OW, and recently we have demonstrated high quality SOWS grown by molecular The InGaAs/GaAs strained layer materials system is beam epitaxy (MBE). In particular, we obtained very now well established, and has been utilised in a number narrow free-exciton linewidths (-2.0-2.5 meV) [6] of promising devices [l-41. Both single quantum well and observed extremely efficient carrier collection [7]. (SOW) and multiple quantum well (MOW) structures Other studies of InGaAsIGaAs sows in the literature have been demonstrated.…”

Section: Introductionmentioning

confidence: 98%

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Photoluminescence characterisation of InGaAs/GaAs quantum well structures

Devine

1988

Semicond. Sci. Technol.

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A photoluminescence (PL) study of InGaAs/GaAs strained quantum well (aw) structures is reported. Both fully strained and partially relaxed structures are examined, and we show that carrier localisation in the latter leads to enhanced extrinsic luminescence.Two other sources of localisation are considered, namely alloy and interface fluctuations, and their effect on the PL spectra is discussed. The effect of indium concentration (xln) on the PL spectra is also examined, with greater surface roughening being observed at higher xln, in turn leading to wider PL linewidths. Finally, we have examined the effect of nonradiative recombination in these QWS. In the unrelaxed layers the trap density is shown to be very low, while non-radiative recombination in the partially relaxed layers most likely occurs at electrically active extended dislocations.

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Section: Extrinsic Luminesczncementioning

confidence: 99%

Section: Non-radiative Recombinationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Photoluminescence characterisation of InGaAs/GaAs quantum well structures

Devine

1988

Semicond. Sci. Technol.

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Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

Juang

1992

Journal of Applied Physics

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GaSb/In0.19Ga0.81Sb single quantum well structures have been grown successfully by metalorganic chemical vapor deposition. The conduction band to mj=±3/2 heavy hole (1C-1HH) transition peak was observed in GaSb/In0.19Ga0.81Sb single quantum well (SQW) with the well width of 100–270 Å. From the excitation power dependence of the photoluminescence spectra, the 1C-1HH transition peak was still observed at low excitation power, 0.31 W/cm2, indicating that the carrier confinement in the well is good. From the temperature dependence of emission intensity of the 1C-1HH transition, the nonradiative recombination centers were few and less than that of the D°-A (donor-acceptor) transition arising from the GaSb barrier layers at temperatures below 30 K. This indicates the good quality of our SQW structure. The dependence of the 1C-HH transition energy was compared with the theoretical results using a strained model.

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Effects of thermal annealing on the optical properties of InGaNAs/GaAs multiple quantum wells

Pomarico¹,

Lomascolo²,

Cingolani³

et al. 2002

Semicond. Sci. Technol.

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We present an optical characterization of as-grown and thermally annealed InGaNAs/GaAs multiple quantum well samples. In both samples, from the analysis of the photoluminescence spectra we can infer that the low-temperature photoluminescence emission is related to carriers localized in the alloy potential fluctuations; with increasing temperature, we observe their gradual delocalization and then the transition towards a completely different type of lineshape, typical of free carrier recombinations. The comparison between the photoluminescence spectra of the as-grown and the annealed samples shows that a remarkable improvement of the optical properties occurs after the thermal annealing. This improvement is related to an important reduction in the density of the defects and in the depth of the alloy potential fluctuations.

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Extrinsic photoluminescence from InGaAs/GaAs pseudomorphic single quantum wells

Cited by 3 publications

References 19 publications

Photoluminescence characterisation of InGaAs/GaAs quantum well structures

Photoluminescence characterisation of InGaAs/GaAs quantum well structures

Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

Effects of thermal annealing on the optical properties of InGaNAs/GaAs multiple quantum wells

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