2005
DOI: 10.1007/s00339-004-3186-9
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F2-laser patterning of GaPO4 resonators for humidity sensing

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Cited by 9 publications
(2 citation statements)
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“…However, the characteristic peak of Ga 2 O 3 was not observed demonstrating the successful conversion of Ga 2 O 3 to the GaPO 4 lm aer the phosphatisation process. Additional investigation into the optical properties demonstrated that the measured wide bandgap was about 6.9 eV for the 2D GaPO 4 lm, which is in excellent agreement with the previously reported values for the bandgap of GaPO 4 lms [203][204][205][206] (Fig. 20h).…”
Section: Sno X Nanoakessupporting
confidence: 91%
“…However, the characteristic peak of Ga 2 O 3 was not observed demonstrating the successful conversion of Ga 2 O 3 to the GaPO 4 lm aer the phosphatisation process. Additional investigation into the optical properties demonstrated that the measured wide bandgap was about 6.9 eV for the 2D GaPO 4 lm, which is in excellent agreement with the previously reported values for the bandgap of GaPO 4 lms [203][204][205][206] (Fig. 20h).…”
Section: Sno X Nanoakessupporting
confidence: 91%
“…F 2 -laser ablation was used to pattern of piezoelectric gallium orthophosphate (GaPO 4 ) crystals (with very high bandgap energy 7.1 eV) that is employed for gas sensing [48,49]. Structuring of ceramics PZT with XeCl excimer radiation was also reported by Eyett et al [50].…”
Section: Nanosecond (Ns) Laser Direct Writingmentioning
confidence: 99%