Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium

Ultrathin Body Germanium-on-Insulator (GeOI) Pseudo-MOSFETs Fabricated by Transfer of Epitaxial Ge Films on III-V Substrates

“…Also, the peak electron mobility is 235 cm 2 /Vs, comparable to that of the Smart Cut GeOI n-MOSFETs with a much lower doping concentration, 13 as shown in Figure 3b. The thickness dependence of the hole and electron mobility in the same Ns of 1 × 10 12 cm −2 of the present GeOI devices and the reported devices on Smart Cut GeOI are shown in Figure 3c.…”

“…[7][8][9][10][11] Also, ultrathin body (UTB) Ge-on-insulator (GeOI) structures are strongly needed to enhance the immunity against short channel effects, which is mandatory for scaled MOSFETs. 12 However, the effective mobility of MOSFETs on GeOI wafers fabricated by Smart Cut has been reported to be lower than expected for the Ge thickness less than 20 nm, 13,14 which might be caused by crystal defects near the Ge/buried oxide (SiO 2 ) interfaces generated during the GeOI fabrication process, and/or some residual damages originating from hydrogen implantation. 15,16 Therefore, high quality GeOI substrate formation is a key to realize good performance in UTB GeOI devices.…”

Accurate strain measurements in highly strained Ge microbridges

“…For this work, we used high crystalline quality 200-mm optical Ge-on-Insulator (GeOI) wafers fabricated by Smart-Cut TM technology [31][32][33][34] in order to shift the mechanical failure of microbridges to higher strain. 20,31 Fig.…”

Влияние Имплантации H-=sup=-+-=/Sup=- На Оптические Свойства Кристаллов Полуизолирующего Арсенида Галлия В Ик-Области Спектра

“…Что касается имплантации ионов водорода (протонов), то она может использоваться как для целенаправленного введения дефектов (в основном точечных) при небольших дозах имплантации, так и в так называемой Smart-Cut техно-логии для создания полупроводниковых структур с ди-электрической изоляцией. Последнее касается как наи-более распространенных структур кремний-на-изолято-ре (SOI) [4], германий-на-изоляторе (GeOI) [5], так и структур на основе сложных полупроводников [3], в том числе структур арсенид галлия на изоляторе (GOI) [6,7].…”