Fabrication and characterisation of high sensitivity copper‐copper oxide‐copper (Cu‐CuO‐Cu) metal‐insulator‐metal tunnel junctions

Abstract

A report is presented on the realisation and characterisation of symmetrical metal-insulator-metal (MIM) diodes using the new material combination: copper-copper oxide-copper (Cu-CuO-Cu). The MIM diodes, having contact areas of 2 × 2 µm 2 , were fabricated using electron beam lithography and sputter deposition. The MIM diodes exhibited an absolute sensitivity as high as 4.497 V − 1 .

Fabrication and Characterization of Vanadium/Vanadium Pentoxide/Vanadium (V/V2O5/V) Tunnel Junction Diodes

“…Electron-beam lithography was used for patterning the MIM diodes. The e-beam resist processing parameters, exposure and development processes parameters, lifto process and contact pad patterning are in detail described in [8] for Cu/CuO/Cu MIM diodes; the same process was applied in this work for fabricating V/V 2 O 5 /V MIM diodes. The rst V electrode of the structure, 100 nm thick, was deposited using DC sputtering at 150 W of power, a chamber base pressure of 2×10 −6 Torr and Argon (Ar) pressure of 3 mTorr.…”

“…Antenna-coupled MIM diodes have been widely investigated for millimeter wave and infrared detection [35] due to several inherent advantages of the structure: fast response, easy fabrication compared to other millimeter wave and infrared detectors, low power consumption, easy to integrate to read-out integrated circuits (ROICs), and uncooled operation [6]. So far many material combinations such as Ni/NiO/Ni [3,4], Al/Al 2 O 3 /Pt [5], Al/Al 2 O 3 /Al [6], Ni/NiO/Au [7], Cu/CuO/Cu [8], Cu/CuO/Au [9], and others have been studied aiming at MIM diodes with highly nonlinear current-voltage (I-V ) behavior to achieve high sensitivities.…”

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

“…MIM diodes are capable of rectification in the high frequency range due to a femtosecond quantum‐tunneling electron transport mechanism through the insulator, making them attractive for applications in solar rectennas, infrared detectors, and wireless power transmission . However, the insulator layer in the MIM stack, which plays a crucial role in determining the diode performance, is typically deposited using vacuum‐based methods, such as sputtering, anodic oxidation of sputtered films, electron beam deposition, and especially atomic layer deposition (ALD), which is commonly used due to its ability to deposit nanoscale films with high accuracy and uniformity. High‐throughput fabrication of MIM diodes is limited by slow deposition rates and the need for a vacuum environment.…”

Plasmonic‐Tuned Flash Cu Nanowelding with Ultrafast Photochemical‐Reducing and Interlocking on Flexible Plastics

“…Note that such repetitive photoreduction is not applicable to previous processes using NPs because the NPs are merged all together during the reduction process. The advantages of this technique are as follows: (i) the photochemical reduction can be directly employed for ultrafast repair of reoxidized Cu electrodes caused by unintentional crack of the passivation layer; (ii) Only selected parts of Cu x O NWs can be reduced by shading the flash light with the photomask for monolithic integration of Schottky barrier devices, including a metal–insulator–metal diode, and thin film transistors; and (iii) This large‐scale photoreduction possibly can be applied to R2R processing for cost‐effective recovering processes …”