Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry

Abstract

We developed and tested three MBE-compatible processes for the deposition of high-quality low-temperature silicon oxides and oxynitrides in the ultra high vacuum at substrate temperatures between room temperature and 5008C: gas enhanced evaporation (GEE), plasma enhanced evaporation (PEE) and plasma enhanced oxidation (PEO). The deposited layers were thoroughly investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of ellipsometry, mechanical pro®lometry, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), Fourier transform infrared (FTIR) spectroscopy, and by electrical measurements (I±V, C±V) on MOS structures. A model of the growth mechanism for each of the processes is suggested.

The effect of high-dose nitrogen plasma immersion ion implantation on silicone surfaces

“…= 103.2 eV). This energy shift is too high to be assigned to organic silicone species and is more consistent with binding energies assigned to SiO x and SiO x N y phases [29,30]. This supports the FTIR-ATR spectra results which suggested the decomposition of the siloxane bonds in the silicone after PIII treatment.…”

“…From table 1 the O:Si ratio in the PIII modified sample is 39.5:20.4 (SiO 1.94 ). The Si 2p binding energy of this SiO x phase (x = 1.94) should be close to that of the Si 2p binding energy of SiO 2 , which is around 104.2 eV [29]. But not all the oxygen atoms are attached to silicon (e.g.…”

“…the C 1s showed the existence of small C-O groups). Therefore, the O:Si ratio in SiO x should be less than 1.94 and this will cause a shift in the Si 2p peak of SiO x to lower binding energies [29].…”

Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

“…A clear concave-like acid texture can be seen International Journal of Photoenergy Figure 6(a), which can be attributed to the signal of SiO 2 . It is recognized that the binding energy of Si 2p related to SiO 2 is dependent on the oxygen composition [16]. Then, the films prepared by electron beam evaporation in this study were nearly stoichiometric silicon dioxide.…”

C60 Nanostructures for Applications in Information Technology

“…Therefore, C 60 is usually deposited onto a thermally oxidized tunneling oxide O. Senftleben et al/C 60 Nanostructures for Applications and is then covered by deposition of a control oxide on top. This can either be done by PECVD [22,23] , by CVD growth of amorphous silicon and subsequent thermal oxidation [24,25] , by co-evaporation of silicon in an oxygen ambient [26,27] or by a low pressure chemical vapor deoposition (LPCVD) process using, e.g., tetraetoxysilane (TEOS) as a precursor [28,29] , which requires a high thermal budget of around 700 8C. The stability and the desorption behavior of C 60 in oxygen atmosphere under elevated temperatures is, therefore, of high interest.…”