Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

Abstract

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. The ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

Quantum nanophotonics with group IV defects in diamond

“…However, as solid-state single-ion detection relies on the readout of a voltage signal generated through the collection of excess carriers produced by the impact of individual ions on the target, this task is challenged by the high energy required (~13 eV) to generate an electron–hole pair in diamond. 61 As the height of the induced charge pulse signal generated by an ion impact is proportional to the deposited energy, there is a trade-off between maximizing the signal-to-noise ratio and preserving the desired spatial resolution—the latter being affected by the ion straggling. To date, the detection of Si ions at energies as low as 200 keV has been demonstrated using single-ion counting techniques developed in the context of nuclear microprobe technologies.…”

Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures

“…Because of the ability to select implantation sites individually, the FIB process allows for such repeated low-yield implantation steps conditionally halted on the creation of the desired emitter number. An alternative approach to create precisely one quantum emitter is to implant only one ion at a time, as was recently demonstrated 44 , combined with electron irradiation or co-implantation of other ion species to create vacancies 34 to drive the SiV conversion yield to unity.…”

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation

“…The ion delivery detection can be used to provide an electrical trigger signal, feeding the activation of a beam blanker to prevent the implantation of additional ions. This task can be performed either through the detection of secondary electrons produced by the impact of the impinging ions, or through the exploitation of the diamond substrate, equipped with suitable electrodes, as a solid‐state single‐ion detector . In this latter case, the detection relies on the measurement of the induced charge signal formed as a consequence of the motion of the electron–hole cloud generated by the ion energy loss in the material .…”

“…In this latter case, the detection relies on the measurement of the induced charge signal formed as a consequence of the motion of the electron–hole cloud generated by the ion energy loss in the material . Despite the large electron–hole pair energy creation of diamond (13.2 eV) in comparison to traditional detector materials, the approach has been successfully assessed for the room‐temperature single‐ion detection at energies as low as 200 keV . A further significant improvement in the sensitivity can be expected with the adoption of ion detection techniques at cryogenic temperatures and the development of high‐sensitive, low‐noise induced charge amplification chains.…”