Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell

He, Bo; Wang, HongZhi; Li, YaoGang; Ma, Zhongquan; Xu, Jing; Zhang, Qinghong; Wang, ChunRui; Xing, Huaizhong; Zhao, Lei; Wang, DunDong

doi:10.1007/s11431-013-5287-1

Cited by 7 publications

(1 citation statement)

References 18 publications

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“…We deposited an IZO thin film on SiNW substrates using RF sputtering to form IZO/SiNW heterojunction diodes. Previous studies have shown that the ITO/p-Si heterojunction device exhibits great photovoltaic effect and rectifying behavior [ 31 ]. Therefore, the resulting ITO-coated SiNW-based heterojunction device had a very large surface area and a short carrier collection path that enhanced light trapping and increased carrier collection efficiency.…”

Section: Introductionmentioning

confidence: 99%

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Chang

2016

Materials

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Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

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Section: Introductionmentioning

confidence: 99%