Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix

Mestanza, S. N. M.; Dói, I.; Swart, Jacobus W.; Frateschi, Newton C.

doi:10.1007/s10853-007-1628-4

Cited by 10 publications

(8 citation statements)

References 23 publications

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“…225,231,232 Ge easily oxidizes; thus, in the neutral V O defects formed after implantation, Ge is able to substitute the place of Si in either one or two positions and readily desorbs. 233,234 In addition, Ge remains stressed after annealing partly due to incorporation in the matrix material. [234][235][236] Therefore, after annealing, the only PL observed is defect related PL around 350 nm and 450 nm.…”

Section: -19mentioning

confidence: 99%

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Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

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The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO 2 , and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si 3 N 4 and Al 2 O 3. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters. V

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Section: -19mentioning

confidence: 99%

“…233,234 In addition, Ge remains stressed after annealing partly due to incorporation in the matrix material. [234][235][236] Therefore, after annealing, the only PL observed is defect related PL around 350 nm and 450 nm. 237 In addition, red PL has been observed for Ge implanted in SiO 2 .…”

Section: -19mentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

View full text Add to dashboard Cite

show abstract

“…Since the first observation of strong visible luminescence from porous Si [2] in 1990, many methods such as pulse laser ablation [3], ion implantation [4], spark processing [5], low-pressure chemical vapor deposition [6,7] stained etch [8], electrochemical anodization (ECA) [9], and strain-induced Stranski-Kranstanov (SK) model [10] have been used to prepare Si-based nanostructures to mimic the porous Si, which can give rise to visible luminescence. Although the Si-based nanostructured materials as prepared via the above methods indeed show good optical properties from visible to infrared wavelength, there is still great challenge in further enhancing the optical performance because it is difficult to control size or position of the nanocrystals or to attain high density of the nanocrystals in the structure.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

Pan

Chen

et al. 2009

Journal of Luminescence

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“…Many methods such as pulse laser ablation [3], ion implantation [4], stained etch [5], electrochemical anodization (ECA) [6], and strain-induced Stranski-Kranstanov (SK) model [7] have been used to prepare Si-based nanostructures. Although the Si-based nanostructured materials possess good optical properties in visible or infrared wavelength range, the great challenge is remaining in further enhancing the optical performance because it is very difficult to control size or position of the nanocrystals or to attain high density of the nanocrystals in the structure.…”

Section: Introductionmentioning

confidence: 99%