Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Thomas, S.G.; Johnson, Eric S.; Tracy, Clarence; Maniar, P.; Li, Xiuling; Roof, B.; Hartmann, Q.J.; Ahmari, D.A.

doi:10.1109/led.2005.851132

Cited by 21 publications

(11 citation statements)

References 5 publications

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“…5 GeOI/Si substrates have been successfully fabricated using Smart-Cut™ technology. 4,6 Essential features of these substrates include compatibility with Si CMOS fabrication processes, easy electrical isolation, and a lattice constant suitable for integration of III-V devices.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

Lubyshev

Fastenau

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A direct growth approach using composite metamorphic buffers was employed for monolithic integration of InP-based high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) on Ge and Ge-on-insulator (GeOI)/Si substrates using molecular beam epitaxy. GaAs layers nucleated on these substrates and grown to a thickness of 0.5μm were optimized to minimize the nucleation and propagation of antiphase boundaries and threading dislocations, and exhibited an atomic force microscopy rms roughness of ∼9Å and x-ray full width at half maximum of ∼36arcsec. A 1.1μm thick graded InAlAs buffer was used to transition from the GaAs to InP lattice parameters. The density of threading dislocations at the upper interface of this InAlAs buffer was ∼107cm−2 based on cross-sectional transmission electron microscopy analyses. HEMT structures grown metamorphically on GeOI/Si substrates using these buffer layers demonstrated transport properties equivalent to base line structures grown on InP substrates, with room temperature mobility greater than 10000cm2∕Vs. Similarly, double heterojunction bipolar transistors (D-HBTs) grown metamorphically on GeOI/Si substrates and fabricated into large area devices exhibited dc parameters close to reference D-HBTs grown on InP substrates.

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Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

Lubyshev

Fastenau

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…GOI wafers are expected to be a promising platform for growing different III-V-based device structures. The work of Thomas et al [113] proves it as an example. According to the authors, they first demonstrate the growth, fabrication and dc device characterization of InGaP/GaAs HBTs (heterojunction bipolar transistors) on germanium-on-insulator substrates having comparable device performance to control structures fabricated on GaAs substrates and bulk Ge substrates.…”

Section: Non-epitaxial Iii-v-on-si Techniques (Bonding)mentioning

confidence: 89%

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Bolkhovityanov¹,

Pchelyakov²

2009

TONANOJ

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While silicon and gallium arsenide are dominant materials in modern micro-and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the large and cheep Si substrate has been the subject of enormous research efforts for the past three decades. This review attempts to systematize and generalize the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and related III-V compounds on Si substrates. Different kinds of bonding as a very promising non-epitaxial method for III-V thin film integration on Si substrate are reviewed. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating of device-quality III-V-on-Si heterostructures and corresponding devices are also presented.

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“…The direct growth of III-V-on-silicon is particularly challenging due to large lattice mismatch (4%) between GaAs and Si, and the polar/non-polar nature of the III-V/IV system, which generates a large density of dislocations and anti-phase domains (APDs), respectively. Over the years, between various techniques developed in order to reduce dislocation density [6][7][8][9][10][11][12], the use of Si substrates overgrown with a Ge layer of graded [13] or constant composition [14,15] has attracted a lot of attention for the monolithic integration of III-V devices on Si, because Ge is both almost lattice-matched to GaAs and compatible with the Si CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

Rajesh

Bordel

Kawaguchi

et al. 2011

Journal of Crystal Growth

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Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Cited by 21 publications

References 5 publications

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

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