Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

Effect of Growth Temperature of GaAs/Al_0.4Ga_0.6As Lower Cladding Layer on the Photoluminescence Intensity of InAs/Sb:GaAs Quantum Dots Monolithically Grown on Ge/Si Substrate by MOCVD for Laser Application

“…The samples were grown by low pressure MOCVD on Ge/Si substrate. A 800 nm thick high structural quality i-GaAs buffer layer with a low surface roughness was first grown on Ge/Si substrate by a three-step growth method [2]. Further, a 1.2 μm n-GaAs (1 x10 18 cm -3 ) layer was grown at 650 o C, followed by a 1.4 μm n-Al 0.4 Ga 0.6 As (6 x10 17 cm -3 ) LCL, and a 100 nm i-GaAs capping layer ( Fig.…”

“…Since the proposal by Arakawa and Sakaki [1], research on quantum dots (QDs) and its application to the next-generation photonics devices have been gaining increasing interest, due to their 3-D quantum confinement properties. Recently, Ge-based Si substrate has drawn considerable attention for the direct growth of III-V-on-Si [2] for silicon photonics application. QD laser grown by molecular beam epitaxy (MBE) on Ge/Si substrate has been recently demonstrated [3].…”

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

“…In the past 30 years, Si has been well established as a semiconductor material for microelectronics. To expand the application, different technologies have been developed to integrate Si with other semiconductor materials, such as direct GaAs-on-Si epitaxy [ 6 ], GaAs-on-Si growth through Ge buffer layers [ 7 ], GaAs-on-SOI epitaxy [ 8 ], GaAs-on-STO-Si epitaxy [ 9 ], GaAs on nanostructure Si substrate [ 10 ], GaAs on nanostructure SiO 2 -on-Si [ 11 ], Conformal growth method [ 12 ], Bonding, and so on.…”

Room Temperature Electroluminescence from InAs/GaAs Quantum Dots Grown on Ge/Si Substrate by Metal Organic Chemical Vapor Deposition

“…Monolithic integration of III-V-on-Si is problematic due to material incompatibility. Recently, Ge-based Si substrate has drawn considerable attention for the direct growth of III-V-on-Si because it's both lattice matched to GaAs and compatible with Si technology [5]. Room temperature (RT) continuous wave QD laser have recently been demonstrated on Ge/Si substrate by MBE [6].…”

“…A 1 μm Ge layer was grown on [100]Si substrate with 6 o off-cut towards [011] by ultra-high vacuum chemical deposition by two-step technique. A high structural quality undoped GaAs layer with a smooth surface was first grown on Ge/Si substrate by three-step growth method [5] followed by a 1.6 μm n-GaAs (1 x 10 18 cm 3 ), a 1.4 μm n-Al 0.4 Ga 0.6 As (6 x 10 17 cm 3 ) lower cladding layer (LCL), the InAs/Sb:GaAs QDs active region, a 1.4 μm p-AlGaAs (6 x 10 18 cm 3 ) upper cladding layer (UCL), and a p + -GaAs contact layer (6 x 10 19 cm 3 ). Silane and diethylzinc were used as the n-and p-doping material.…”