Fabrication and characterization of ITO thin films deposited by excimer laser evaporation

Structural and opto-electronic properties of transparent conducting (222)-textured Zr-doped In2O3/ZnO bilayer films

“…This bombardment gives additional energy to the molecules and clusters condensed on a substrate and peels off molecules that are bonded only weakly to the film [19,20]. However, when the film thickness reaches 210 nm, the lattice constant increases sharply, indicating that the film contains many growth-induced defects [21].…”

Effects of an additional magnetic field in ITO thin film deposition by magnetron sputtering

“…ITO is an n-type semiconductor with a wide band gap between 3.3 and 4.3 eV at room temperature with a bixbyte structure. A range of methods, such as various types of sputtering, evaporation, plasma-assisted electron beam evaporation, and chemical vapor deposition (CVD) [6][7][8], have been used to deposit ITO films to optimize the electrical and optical properties of the ITO films. In particular, magnetron sputtering has attracted considerable attention as a reliable tool for depositing thin films and surface modification owing to the high deposition rates, easy to adjust sputtering parameters, and the good film quality.…”

Effect of GZO thickness and annealing temperature on the structural, electrical and optical properties of GZO/Ag/GZO sandwich films

“…Indium tin oxide (ITO) film is the most widely used TCO film due to its high transparency, low resistivity and high work function [5,6]. However, ITO film is not stable and shows degradation at temperatures above 700 K [7,8]. Zinc oxide (ZnO) is a promising alternative to ITO in TCOs applications due to its thermally stability [9], non-toxicity, low cost and abundance.…”