Fabrication and characterization of n-ZnO nanorods/p-Si (100) heterojunction

Thi, Kieu Loan Phan; Nguyen, Lam Thanh; Dao, Anh Tuan; Ke, Nguyen Huu; Le, Vu Tuan Hung

doi:10.1142/s0218863515500502

J. Nonlinear Optic. Phys. Mat.

2015

DOI: 10.1142/s0218863515500502

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Fabrication and characterization of n-ZnO nanorods/p-Si (100) heterojunction

Kieu Loan Phan Thi

Lam Thanh Nguyen

Anh Tuan Dao

et al.

Abstract: In this paper, ZnO nanorods were grown by wet chemical method on p-Si (100) substrate to form n-ZnO nanorods/p-Si (100) heterojunction. The optical, electrical, structural properties of n-ZnO nanorods/p-Si(100) heterojunction were analyzed by the photoluminescence (PL) spectroscopy, [Formula: see text]–[Formula: see text] measurement, X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The room temperature PL spectra reveal the good optical property of the heterojunction with strong U… Show more

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Cited by 3 publications

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“…Methods of synthesizing such systems and determining their linear optical properties are presented in Ref. 6. Zhang et al, 7 report on an investigation of third-order optical nonlinearity of carbon nanotubes distributed into a polymer matrix; these systems demonstrate third-order nonlinear susceptibility on the order of 10 À12 esu.…”

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Large third-order optical nonlinearity in PdO thin films

Brodyn

Rudenko

Liakhovetskyi

et al. 2017

J. Nonlinear Optic. Phys. Mat.

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We report on a study of the absorption spectra and third-order nonlinear optical properties of crystalline PdO thin¯lms, grown by oxidation of thin palladium¯lms deposited on a substrate. The spectra reveal an absorption peak at ¼ 480 nm, which grows and narrows signi¯cantly as the temperature is lowered to T ¼ 77 K. This behavior suggests an exciton nature of the peak. According to the position of the long wavelength absorption edge in the spectra, the bandgap of the material is E g ¼ 2:4 eV. Utilizing the techniques of degenerate four-wave mixing and Z-scan, using a pulsed laser radiation with a wavelength ¼ 532 nm and a pulse duration of p ¼ 9 ns, we determined the real part of the third-order nonlinear susceptibility of Re ð3Þ ¼ À1:6 Â 10 À4 esu. Possible nature of this high refractive nonlinearity is discussed.Keywords: Palladium oxide; nonlinear optical properties; nanosecond pulsed laser; refractive nonlinearity.One of the most important problems of modern materials science is the search for and development of new functional optical materials with large optical nonlinearities, in particular third-order nonlinearities, for applications in optical information systems. Recent studies have shown that most promising in this respect are nanostructured systems based on noble metals, 1-3 where the third-order nonlinear optical response is enhanced by localized surface plasmons. 4 Another class of promising nonlinear optical materials comprise low-dimensional structures of metal oxides. For instance, the work of Panda et al., 5 report e±cient second harmonic generation of femtosecond 800 nm laser pulses using ZnO nanorods, which implies a high second-order optical nonlinearity of these systems. Methods of synthesizing such systems and determining their linear optical properties are presented in Ref. 6. Zhang et al., 7 report on an investigation of third-order optical nonlinearity of carbon nanotubes distributed into a polymer matrix; these systems demonstrate third-order nonlinear susceptibility on the order of 10 À12 esu. Also promising are thin¯lms of transition 3d metal oxides

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mentioning

confidence: 99%

Large third-order optical nonlinearity in PdO thin films

Brodyn

Rudenko

Liakhovetskyi

et al. 2017

J. Nonlinear Optic. Phys. Mat.

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The Morphology and Optical Properties of ZnO Nanorods Grown on MoS2 Thin Films at Various Thicknesses Using a Chemical Bath Deposition Method

Thi

Nguyen

et al. 2018

Journal of Elec Materi

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Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

Faraz

Shah

Alvi

et al. 2020

Advances in Condensed Matter Physics

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The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.

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Fabrication and characterization of n-ZnO nanorods/p-Si (100) heterojunction

Cited by 3 publications

References 17 publications

Large third-order optical nonlinearity in PdO thin films

Large third-order optical nonlinearity in PdO thin films

The Morphology and Optical Properties of ZnO Nanorods Grown on MoS2 Thin Films at Various Thicknesses Using a Chemical Bath Deposition Method

Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

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