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In this paper, ZnO nanorods were grown by wet chemical method on p-Si (100) substrate to form n-ZnO nanorods/p-Si (100) heterojunction. The optical, electrical, structural properties of n-ZnO nanorods/p-Si(100) heterojunction were analyzed by the photoluminescence (PL) spectroscopy, [Formula: see text]–[Formula: see text] measurement, X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The room temperature PL spectra reveal the good optical property of the heterojunction with strong UV peak at 385[Formula: see text]nm. The ZnO nanorods were vertically well-aligned on p-Si (100) and had an average height of about 1.6[Formula: see text][Formula: see text]m. The n-ZnO nanorods/p-Si (100) heterojunction also exhibits diode-like-rectifying-behavior.

Vanadium and nitrogen co-doped TiO2(TiO2:(V, N)) thin films were fabricated by sol–gel method. Crystal structure, surface morphology, chemical composition and absorption edge of the thin films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and UV-Vis spectroscopy techniques, respectively. Photocatalytic activity of all thin films were evaluated by measuring decomposition rate of methylene blue solution under visible light irradiation. The water contact angle analyzer was used to measure water contact angle on the film. The results indicate that absorption edge of TiO2:(V, N) thin films shifts to visible region. All co-doped TiO2 samples show higher visible light photocatalytic activity than undoped TiO2 and single-element-doped TiO2 counterparts. The best TiO2:(V, N) thin film can decompose about 90% MB solution and gets super wet state after 150[Formula: see text]min under compact light irradiation.