Fabrication and characterization of piezoresistive strain sensors for high temperature applications

Fraga, Mariana Amorim; Furlan, Humber; Wakavaiachi, S. M.; Massi, M.

doi:10.1109/icit.2010.5472747

Cited by 9 publications

(7 citation statements)

References 1 publication

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“…For further reading on the fabrication process of SiC MEMS devices, we recommend the review paper of Zorman and Parro [131] and the book of Saddow [132]. [121] and [134].…”

Section: Applications Of Silicon Carbide Piezoresistive Effectmentioning

confidence: 99%

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The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Phan

Dao

Nakamura

et al. 2015

J. Microelectromech. Syst.

222

148

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“…For further reading on the fabrication process of SiC MEMS devices, we recommend the review paper of Zorman and Parro [131] and the book of Saddow [132]. [121] and [134].…”

Section: Applications Of Silicon Carbide Piezoresistive Effectmentioning

confidence: 99%

“…The piezoresistive effect of SiC is also valuable for monitoring the strain of hot sections inside combustion chambers. Fraga et al proposed amorphous SiC strain sensors which have a relative resistance change of 4.8% per 1 ppm of strain at room temperature [134].…”

Section: Applications Of Silicon Carbide Piezoresistive Effectmentioning

confidence: 99%

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Phan

Dao

Nakamura

et al. 2015

J. Microelectromech. Syst.

222

148

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“…Assuming the voltage V is applied across the contact pads. Numerically, resistance R as a function of temperature is given by [47];…”

Section: Theoretical Aspectsmentioning

confidence: 99%

Influence of the pressure range on temperature coefficient of resistivity (TCR) for polysilicon piezoresistive MEMS pressure sensor

2020

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Sensitivity with respect to physical change of any type of sensor depends upon structure of the sensor and sensing material. If sensor is sensitive with more than single physical change (pressure or temperature etc) than sensitivity will get affected because of conflict in impact due to multiple physical parameters. Depending upon the designer’s intuition and experience, a variety of shapes of sensor had been proposed which can bear both the pressure and temperature. To understand the influence of temperature and pressure on the linearity and sensitivity, pressure sensors has been designed having 50 μm thick square diaphragm is being simulated and analyzed. The effect of pressure on Temperature Coefficient of Resistivity (TCR) of poly-silicon pressure sensor has been investigated in this paper. The stresses tempted in the piezoresistors and dislocation created in diaphragm have been studied using finite element method (FEM). The physical characteristics of sensor have been determined within the temperature range from 10 °C to 100 °C under the pressure range of 0 to 100 psi. It has been observed that TCR reduces with increasing pressure up to 30 psi, and beyond this pressure, the TCR begins to increase and thus the TCR shows the duality in nature. At 100 psi pressure, the calculated TCR for the diaphragm is found of the order of ∼7.7 × 10−3 (/°C). Thus, in conclusion, the pressure range ∼40–100 psi is recommended as the optimal range to achieve the better sensitivity. The temperature sensitivity of designed sensor has been found to be ∼0.10455 mV °C−1 while the pressure sensitivity of the proposed sensors which has been found to be 1.20051 mV psi−1. Hence, designed sensor can be used as both pressure and temperature sensing device incorporated into a single sensor.

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“…One of the most widely used strain measurement techniques is a piezo-resistive thin-film strain gauge 4 . The strain gauge has the advantages of low cost and being an established product.…”

Section: Introductionmentioning

confidence: 99%

Wireless interrogation of antenna sensors for strain monitoring

Huang

2012

SPIE Proceedings

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This paper presents a wireless interrogation system using impedance switching and amplitude modulation to detect the resonant frequency shift of antenna sensors under external load. The wireless antenna sensor, constructed by a few microwave components, is able to detect small strain changes without requiring any local power source. First, the principle of operation of the unpowered wireless interrogation system is discussed, followed by the characterization of the effect of applied strains on the resonant frequency of the antenna sensor. The shifts of the resonant frequency under different loads were correlated to the strains experienced by the antenna sensor. The experimental results agreed well with the analytical prediction.

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Fabrication and characterization of piezoresistive strain sensors for high temperature applications

Cited by 9 publications

References 1 publication

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Influence of the pressure range on temperature coefficient of resistivity (TCR) for polysilicon piezoresistive MEMS pressure sensor

Wireless interrogation of antenna sensors for strain monitoring

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