High-performance
photodetectors play crucial roles as an essential
tool in many fields of science and technology, such as photonics,
imaging, spectroscopy, and data communications. Demands for desired
efficiency and low-cost new photodetectors through facile manufacturing
methods have become a long-standing challenge. We used a simple successive
ionic layer adsorption and reaction (SILAR) method to synthesize CdS,
CdSe, and PbS nanoparticles directly grown on WSe2 crystalline
flakes. In addition to the excellent wavelength selectivity for (30
nm) CdS, (30 nm) CdSe, and (6 nm) PbS/WSe2 heterostructures,
the hybrid devices presented an efficient photodetector with a photoresponsivity
of 48.72 A/W, a quantum efficiency of 71%, and a response time of
2.5–3.5 ms. Considering the energy band bending structure and
numerical simulation data, the electric field distribution at interfaces
and photocarrier generation/recombination rates have been studied.
The introduced fabrication strategy is fully compatible with the semiconductor
industry process, and it can be used as a novel method for fabricating
wavelength-tunable and high-performance photodetectors toward innovative
optoelectronic applications.