2002
DOI: 10.1109/tmag.2002.988914
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Fabrication and electrical properties of lapped type of TMR heads for ∼50 Gb/in/sup 2/ and beyond

Abstract: Tunnel giant magnetoresistance (TMR) heads at 50 Gb/in 2 have been fabricated using improved lapping process. Together with writer of 2.0 T pole materials, recording performance has been demonstrated at magnetic write width of 0.28 m and magnetic read width of 0.18 m. The resistance area product of final wafer data is around 5 m 2 , with lead and contact resistance included, resulting in a final head resistance of around 200 . The output voltage achieved for 1 mA bias current is 42 mV/ m, and the isolated puls… Show more

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Cited by 39 publications
(13 citation statements)
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“…However, in most of the cases theories were limited to specific problems where intricate structures at the interfaces were simplified. Until now, EB effects have been exploited in several technological applications such as read head of recording devices [39,40,41,42,43,44,45,46,47,48,49,50,51,52,53,54], magnetoresistive random access memories (MRRAM) [55,56,57,58,59,60,61,62,63,64,65,66,67,68,69,70,71,72,73,74,75,76] and it has been proposed for the technological applications in stabilizing magnetization of superparamagnetic nanoparticles [77,78,79,80] or to improve coercivity and energy product of the permanent magnets [81,82,83,84].…”
Section: Introductionmentioning
confidence: 99%
“…However, in most of the cases theories were limited to specific problems where intricate structures at the interfaces were simplified. Until now, EB effects have been exploited in several technological applications such as read head of recording devices [39,40,41,42,43,44,45,46,47,48,49,50,51,52,53,54], magnetoresistive random access memories (MRRAM) [55,56,57,58,59,60,61,62,63,64,65,66,67,68,69,70,71,72,73,74,75,76] and it has been proposed for the technological applications in stabilizing magnetization of superparamagnetic nanoparticles [77,78,79,80] or to improve coercivity and energy product of the permanent magnets [81,82,83,84].…”
Section: Introductionmentioning
confidence: 99%
“…The increase in reading data rate and reduction in head noise are the pre-requisites for the use of magnetic tunnel junctions (MTJs) in read head sensors for high-density recording media [1][2][3]. This purpose is achieved by using ultra-thin tunnel barriers between two ferromagnetic electrodes.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17][18] In order to develop the excellent properties for GMR and TMR devices, however, the investigations on fundamental magnetic properties for these practical antiferromagets have been highly desired, because the exchange biasing characteristics are closely related to the spin structures, magnetocrystalline anisotropy energy (MAE) and the magnitude of T N of the antiferromagnetic materials. [19][20][21] In addition, recent interest is how to design the devices with a low electrical resistance at room temperature, 22,23) especially in the current perpendicular to the plane (CPP)-type spin valves.…”
Section: Introductionmentioning
confidence: 99%