Fabrication and passivation of GaSb photodiodes

Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

“…It can be seen that the lowest dark currents measured were for the sample grown on native GaSb -approximately 0.01 Acm -2 at -1.0 V. Our values are similar to, or better than, those for homoepitaxial GaSb p-i-n diodes reported elsewhere (an example is shown in the figure). 22 The dark currents for the sample grown on GaAs and the sample grown on Si were both significantly greater: at -1.0 V, currents of approximately 0.18 Acm -2 and 0.9 Acm -2 , were measured, respectively. It is interesting to note that significantly lower dark currents were observed in the sample grown on GaAs than in the sample grown on…”

“…Part (b) shows data at K for μm diameter mesas. Data from[22] is also shown in (a), providing a comparison with GaSb p-i-n diodes reported in the literature.…”

Photothermal investigations of doping effects on opto-thermal properties of bulk GaSb

“…In this work, photothermal deflection [6][7][8][9][10][11] and spectroscopic reflectivity are used in order to study the influence of doping on thermal and optical properties of bulk GaSb. For this purpose, absorption spectrum, gap energy, refractive index and thermal diffusivity are measured and doping effects are highlighted.…”

Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation

“…[31][32][33] Any remaining native oxides formed following the sulfur treatment or sulfur desorption can be further etched by the ALD precursor (i.e., TMA). As a result, we hypothesize two possible reasons why Al2O3 improves passivation: (1) Al-O participates in interfacial bonding through supplementing or substituting sulfur terminated bonds, 33) and (2) Al2O3 shells prevent desorption of sulfur atoms from the detector surface.…”

“…allium antimonide (GaSb), a compound III-V semiconductor material with bandgap of 0.726 eV (or equivalent absorption wavelength ∼1.71 μm) at room temperature, has been implemented into a variety of photodetectors at short-, mid-, and long-wavelength infrared regimes. [1][2][3][4][5] To fabricate pixels, i.e. focal plane arrays, bulk GaSb materials are typically etched by chemicals into mesa shapes with exposed GaSb surfaces (or GaSb/air interfaces).…”