Fabrication and performance of 1.3-μm 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Mereuta, A.; Sirbu, Alexei; Caliman, A.; Suruceanu, G.; Яковлев, В.; Micković, Zlatko; Kapon, E.

doi:10.1016/j.jcrysgro.2014.11.012

Cited by 17 publications

(11 citation statements)

References 11 publications

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“…The progress in 1300 nm wavelength wafer-fused VCSELs was backed by the progress in 1500 nm wafer-fused VCSELs [20]. The recent status of wafer-fusion VCSEL technology [21], as compared with its status presented earlier [2], is a result of the dramatic improvement of the quality of the final double fused-wafer as well as of the processing steps that allows a successful demonstration of their reliability.…”

Section: Design and Fabricationmentioning

confidence: 99%

Long Wavelength VCSELs and VCSEL-Based Processing of Microwave Signals

Belkin¹,

Belkin²,

Loparev³

et al. 2015

Optoelectronics - Materials and Devices

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Section: Design and Fabricationmentioning

confidence: 99%

Long Wavelength VCSELs and VCSEL-Based Processing of Microwave Signals

Belkin¹,

Belkin²,

Loparev³

et al. 2015

Optoelectronics - Materials and Devices

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“…The development of metal-organic chemical vapor deposition (MOCVD) technology has contributed to improving the performance of the optoelectronic devices, such as the edge emitting laser (EEL) [1,2], vertical-cavity surface-emitting laser (VCSEL) [3,4], and photovoltaic cell (PVC) [5,6]. However, the cost of epitaxy is still too high for many applications.…”

Section: Introductionmentioning

confidence: 99%

A Modeling and Experimental Study on the Growth of VCSEL Materials Using an 8 × 6 Inch Planetary MOCVD Reactor

et al. 2020

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VCSEL (vertical cavity surface emitting laser) is a promising optoelectronic device, but its high manufacturing cost limits its scope of applications. Growing on larger size wafers is an effective way to reduce the cost. However, the growth rate uniformity needs to be optimized to ensure the uniformity of the devices’ performance over the wafers. This paper investigates the factors which influence the growth rate uniformity using an 8 × 6 inch planetary reactor through experiments and simulations. At a carrier gas flow rate of 37 slm, an AsH3 flow rate of 600 sccm, an AsH3 flow rate ratio of 100:500, and a ceiling temperature of 175 °C, the growth rate uniformity of the AlGaAs layer with a relative standard deviation of 0.16%, 1σ, was obtained over the 6-inch wafers. The uniformity of the DBR stop band center and VCSEL quantum well wavelength with standard deviations of 0.142% and 0.023%, 1σ, were received over the 6-inch wafers, respectively. Based on the optimized results, 99.95% of VCSEL devices with wavelengths of 940 ± 5 nm were realized over the 6-inch wafers.

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“…Higher layer uniformities can be reached in chemical vapour deposition processes. Using metalorganic vapour phase epitaxy (MOVPE), a layer thickness control of 0.1-0.5% has been reported [50]. Another high-precision production method is atomic layer deposition (ALD), where a thickness accuracy of 0.5% is possible for TiO 2 thin films at deposition temperatures above 250 • C [51].…”

Section: Introductionmentioning

confidence: 99%

“…To enable a realistic assessment of the performance of fabricated structures in this work, we take into account finite production tolerances via Monte Carlo simulations. Based on achieved thickness control of 0.5% reported in the literature [50,51], a realistic target tolerance of 0.5% is assumed in the main analysis of this work, which corresponds to an absolute value of ≈ 1 nm. We choose a value at the limit of what is currently possible, imagining that such accuracy will be enabled in routine production by future advances in nanofabrication techniques.…”

Section: Introductionmentioning

confidence: 99%

Enhanced upconversion in one-dimensional photonic crystals: a simulation-based assessment within realistic material and fabrication constraints

Hofmann¹,

Eriksen²,

Fischer³

et al. 2018

Opt. Express

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This paper presents a simulation-based assessment of the potential for improving the upconversion efficiency of β-NaYF:Er by embedding the upconverter in a one-dimensional photonic crystal. The considered family of structures consists of alternating quarter-wave layers of the upconverter material and a spacer material with a higher refractive index. The two photonic effects of the structures, a modified local energy density and a modified local density of optical states, are considered within a rate-equation-modeling framework, which describes the internal dynamics of the upconversion process. Optimal designs are identified, while taking into account production tolerances via Monte Carlo simulations. To determine the maximum upconversion efficiency across all realistically attainable structures, the refractive index of the spacer material is varied within the range of existing materials. Assuming a production tolerance of σ = 1 nm, the optimized structures enable more than 300-fold upconversion photoluminescence enhancements under one sun and upconversion quantum yields exceeding 15% under 30 suns concentration.

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Fabrication and performance of 1.3-μm 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Cited by 17 publications

References 11 publications

Long Wavelength VCSELs and VCSEL-Based Processing of Microwave Signals

Long Wavelength VCSELs and VCSEL-Based Processing of Microwave Signals

A Modeling and Experimental Study on the Growth of VCSEL Materials Using an 8 × 6 Inch Planetary MOCVD Reactor

Enhanced upconversion in one-dimensional photonic crystals: a simulation-based assessment within realistic material and fabrication constraints

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