Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes

Eom, C. B.; Dover, R. B. van; Phillips, Julia M.; Werder, D. J.; Marshall, J. H.; Chen, C. H.; Cava, R. J.; Fleming, R. M.; Fork, D. K.

doi:10.1063/1.110436

Cited by 424 publications

(126 citation statements)

References 14 publications

Supporting

Mentioning

123

Contrasting

Order By: Relevance

“…16 Further the use of oxide electrodes is very beneficial for the long-term stability of ferroelectric oxides, as compared to metal electrodes. 17 For the ferroelectric the PMN-PT(67/33) composition was selected because of its giant piezoelectricity in thin film form on STO-buffered silicon as was shown by S. H. Baek et al 4 All films were deposited on a heated substrate with PLD using a KrF Excimer laser operating at 248nm, using commercial targets. The deposition conditions are given in table I.…”

Section: Methodsmentioning

confidence: 99%

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

et al. 2016

View full text Add to dashboard Cite

The pulsed laser deposition process of 300nm thick films of Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 on (001)-oriented SrTiO3 was studied by varying deposition pressure, substrate deposition temperature, laser fluence on the target and target-substrate distance. Perovskite phase pure, (001)-oriented, epitaxial smooth films were obtained in a narrow range of deposition parameters. The ferroelectric and dielectric properties of films fabricated within this parameter range still vary significantly. This shows the sensitivity of the system for growth conditions. The best film has a polarization value close to that expected for a (001) poled, stress free single crystal film. All films show deposition conditions dependent variations in the self-bias field. The self-bias is very stable during long cycling for films made at optimum deposition conditions. The piezoelectric coefficients of the films are strongly reduced with respect to bulk single crystal values due to the film clamping. The properties variations are ascribed to changes in the grain boundary properties in which film defects are expected to accumulate. Notably slight off-stoichiometry may cause localized screening charges, affecting specifically the polarization and dielectric constant.

show abstract

Section: Methodsmentioning

confidence: 99%

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Several groups reported on the growth and crystallographic characterization of ferroelectric thin films in combination with a variety of oxidic electrode materials. [5][6][7] Ramesh et al 8 9 Important questions remain as to the nature of the electrode-ferroelectric interface. For example, it is unclear if the near-electrode material is ferroelectric and if charge injection is of importance.…”

Section: Introductionmentioning

confidence: 99%

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Cillessen¹,

Prins²,

Wolf³

1997

Journal of Applied Physics

164

View full text Add to dashboard Cite

Thin-film ferroelectric capacitors consisting of PbZr 0.53 Ti 0.47 O 3 sandwiched between La 0.5 Sr 0.5 CoO 3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (E c ) which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence of E c and a good endurance up to 10 11 cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase of E c with decreasing thickness of the ferroelectric layer. We show that charge injection can explain the experimentally observed increase of E c with decreasing ferroelectric layer thickness. An overview is given of the growth conditions needed for PbZr 0.53 Ti 0.47 O 3 films, because the precise stoichiometry is of the utmost importance for the capacitor quality.

show abstract

“…SrRuO 3 has been subject to many studies because of its unique structural, magnetic, and electronic properties, and chemical stability. 1 The strong magnetocrystalline anisotropy in single-domain thin films 2,3 as well as crystals makes SrRuO 3 especially suitable for use in magnetic tunnel junctions, provided that single-domain heterostructures are achievable. 4,5 Furthermore, ferromagnetic SrRuO 3 has been used as a model system to study the initial growth, with special attention to surface termination and growth mode.…”

mentioning

confidence: 99%

Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth

Rijnders

Blank

Choi

et al. 2004

Applied Physics Letters

175

188

View full text Add to dashboard Cite

During the initial growth of the ferromagnetic oxide SrRuO 3 on TiO 2 -terminated SrTiO 3 , we observe a self-organized conversion of the terminating atomic layer from RuO 2 to SrO. This conversion induces an abrupt change in growth mode from layer by layer to growth by step advancement, indicating a large enhancement of the surface diffusivity. This growth mode enables the growth of single-crystalline and single-domain thin films. Both conversion and the resulting growth mode enable the control of the interface properties in heteroepitaxial multilayer structures on an atomic level.

show abstract

Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes

Cited by 424 publications

References 14 publications

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth

Contact Info

Product

Resources

About