Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

Новиков, С. Н.; Лебедева, Н. А.; Pierz, K.; Satrapinski, A.

doi:10.1109/tim.2014.2385131

Cited by 19 publications

(13 citation statements)

References 23 publications

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“…Although millimeter-scale EG devices have already been realized for metrology, passivation efforts for devices of this size and application have not been heavily explored. 11,12 Similar work has been reported for much smaller EG devices, but quantum Hall measurements were not monitored. 13…”

Section: Introductionsupporting

confidence: 55%

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation

Rigosi

Liu

et al. 2018

Microelectronic Engineering

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Homogeneous, single-crystal, monolayer epitaxial graphene (EG) is the one of most promising candidates for the advancement of quantized Hall resistance (QHR) standards. A remaining challenge for the electrical characterization of EG-based quantum Hall devices as a useful tool for metrology is that they are electrically unstable when exposed to air due to the adsorption of and interaction with atmospheric molecular dopants. The resulting changes in the charge carrier density become apparent by variations in the surface conductivity, the charge carrier mobility, and may result in a transition from n-type to p-type conductivity. This work evaluates the use of Parylene C and Parylene N as passivation layers for EG. Electronic transport of EG quantum Hall devices and non-contact microwave perturbation measurements of millimeter-sized areas of EG are both performed on bare and Parylene coated samples to test the efficacy of the passivation layers. The reported results, showing a significant improvement in passivation due to Parylene deposition, suggest a method for the mass production of millimeter-scale graphene devices with stable electrical properties.

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Section: Introductionsupporting

confidence: 55%

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation

Rigosi

Liu

et al. 2018

Microelectronic Engineering

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“… 4 − 11 Experiments performed on millimeter-scale devices indicate that epitaxially grown graphene (EG) can provide uniform transport properties over large areas, a prospect most promising when it comes to development of much larger graphene-based devices. 12 Although properties of EG such as the longitudinal resistivity, carrier density, and mobility are generally good figures of merit to determine epitaxial graphene quality, 13 these properties are desired to be controllable if such devices are to be mass produced.…”

Section: Introductionmentioning

confidence: 99%

Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation

et al. 2017

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Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of millimeter-sized devices with single-crystal domains. A clean fabrication process was used to produce EG-based devices, with n-type doping level of the order of 1012 cm−2. Generally, electrical properties of EG, such as longitudinal resistivity, remain unstable when devices are exposed to air due to adsorption of molecular dopants, whose presence shifts the carrier density close to the Dirac point (<1010 cm−2) or into the p-type regime. Here, we report experimental results on the use of amorphous boron nitride (a-BN) as an encapsulation layer, whereby EG can maintain its longitudinal resistivity and have its carrier density modulated. Furthermore, we exposed 12 devices to controlled temperatures of up to 85 °C and relative humidity of up to 85% and reported that an approximately 20 nm a-BN encapsulation thickness is sufficient to preserve their longitudinal resistivity to within 10% of the previously measured value. We monitored the electronic properties of our encapsulated and nonencapsulated EG samples by magnetotransport measurements, using a neodymium iron boron magnet. Our results have essential importance in the mass production of millimeter-scale graphene devices, with stable electrical properties.

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“…Для изготовления надежных и низкоомных контак-тов использовался двухступенчатый процесс металлиза-ции [25]. Контакты к графену изготавливались методом взрывной литографии.…”

Section: технология изготовления P−n-переходовunclassified

Изготовление p-n-переходов в графене и их применение для детектирования терагерцового излучения

Васильева¹,

Васильев²,

Novikov

et al. 2018

Физика И Техника Полупроводников

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A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

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Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

Cited by 19 publications

References 23 publications

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation

Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation

Изготовление p-n-переходов в графене и их применение для детектирования терагерцового излучения

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