Fabrication demonstration of 1-1.5&amp;amp;#181; NMOS circuits using optical tri-level processing technology

Orlowsky, Kolja; Speeney, D. V.; Hu, Emily; Dalton, J. V.; Sinha, A. K.

doi:10.1109/iedm.1983.190562

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High-speed Wide-band Strategies1

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1984

1986

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“…The second alternative has no such basic limitations. Increasing the top speed of multivibrators can be done at the fabrication level by use of a fineline MOS process like in reference [5] and at the circuit level by appropriate techniques. These will be discussed next.…”

Section: High-speed Wide-band Strategiesmentioning

confidence: 99%

Design of high-speed, wide-band MOS oscillators for monolithic phase-locked loop applications

Banu

1988., IEEE International Symposium on Circuits and Systems

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Methods are presented for the realization of MOS oscillators with multidecade tuning range and GHz top speed. The theory yields transistor-only circuits with robust, digital-like structures. These are relaxation networks capable of high frequency operation due to use of parasitic timing capacitors, simplified feedback networks, and submicron-channel transistors. NMOS and CMOS implementations are discussed.

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Section: High-speed Wide-band Strategiesmentioning

confidence: 99%