Fabrication of 2D PdSe₂/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Abstract

Room-temperature infrared photodetectors are in great demand because of their vitally important applications in the military and civilian fields, which has inspired intensive studies in recent decades. Here, we present the fabrication of a large-size PdSe 2 /CdTe mixed-dimensional van der Waals (vdW) heterojunction for room-temperature infrared detection. Taking advantage of the wide light absorption of the multilayer PdSe 2 , high-quality vdW interface, and unique mixed-dimensional device geometry, the present device is capable of detecting an ultrawide light up to longwave infrared (LWIR) of 10.6 μm at room temperature. In addition, our photodetector exhibits a good capability to follow short pulse infrared signals with a quick response rate of 70 ns, a large responsivity of 324.7 mA/W, and a reasonable specific detectivity of 3.3 × 10 12 Jones. Significantly, the assembled photodetector is highly sensitive to a polarized infrared light signal with a decent polarization sensitivity of 4.4. More importantly, an outstanding LWIR imaging capability based on the PdSe 2 /CdTe vdW heterojunction at nonrefrigeration condition is demonstrated. Our work paves a novel route for the design of highly polarization-sensitive, room-temperature infrared photodetectors.

Type-I Heterostructure Based on WS2/PtS2 for High-Performance Photodetectors

“…The deviation between α and 1 indicates the loss of photon excited carriers, which indicates that there are some trap states at the interface of the heterostructure. 65 The incident power intensity-dependent photocurrent of the WS 2 /PtS 2 heterostructure is shown in Figure S4 in the Supporting Information.…”

Enhanced photodetection and a wider spectral range in the In2S3–ZnO 2D–3D heterojunction: combined optical absorption and enhanced carrier separation at the type-II heterojunction

“…7(d), and was calculated as θ = 0.75 (<1 ideal case), which implied the photocurrent loss may be due to traps in the heterojunction sample. 52…”

A wafer-scale two-dimensional platinum monosulfide ultrathin film via metal sulfurization for high performance photoelectronics

“…Besides, noble metal dichalcogenides (nMDCs) or noble metal chalcogenides (nMCs) have emerged as a hot topic with the current progress in their controlled synthesis 7–9 and photoelectronic devices. 10–12 Platinum sulfide has shown extraordinary mechanical, 13,14 optical, electronic, magnetic 15 and phase transition properties. 16 A few reports on 2D PtS exist including electronic structure calculations, 17,18 spectral analysis 19 and nonlinear optical device applications.…”