Fabrication of a 7.6‐in.‐diagonal prototype ballistic electron surface‐emitting display on a glass substrate

Abstract

Abstract— A prototype ballistic electron surface‐emitting display (BSD) was fabricated on a TFT or PDP glass substrate by using a low‐temperature process. A 84 × 63‐pixel, 7.6‐in.‐diagonal full‐color BSD shows excellent performance, comparable to the previously reported 2.6‐in. model. This result demonstrates the strong possibility of large‐panel BSDs.

Liquid-phase deposition of thin Si films by ballistic electro-reduction

“…2 The emission mechanism is based on a ballistic electron transport through nc-Si dots interconnected with tunnel oxides. 3,4 The mean kinetic energy of emitted output electrons reaches 5-7 eV at applied voltages of 15-20 V. These features make it possible to utilize this emitter in various media: flat panel display 5 and parallel electron beam lithography 6 in vacuum, vacuum-ultraviolet light emission in atmospheric-pressure Xe gas ambient, 7 and electron attachment producing negative ions in air. 8 Another important issue is that the nc-Si emitter operates even in solutions as an active electrode supplying highly reducing electrons.…”

“…The prepared multilayered structure enhances the generation of ballistic electrons as reported previously. 4,5 The prepared nc-Si layers were then oxidized by a rapid thermal oxidization (RTO) at 900 C for 20 min to enhance the electric field effect.…”

Silicon Nanocrystals in Porous Silicon and Applications

“…in diagonal). [137] A principle of planar-type visible light emission has been reported using ballistic electrons as excitation source [127,128,138,139]. The device is composed of a surface-emitting cold cathode made of PSi and a luminescent material directly deposited onto the electron emitter [127].…”

Direct excitation of xenon by ballistic electrons emitted from nanocrystalline‐silicon planar cathode and vacuum‐ultraviolet light emission

“…The rise time of VUV emission should be further improved by reducing the capacitive component of the experimental system because the response of the electron emission itself is available for the display application. 7 The V d dependence of the VUV light intensity is shown in Fig. 6.…”