Liquid-phase deposition of thin Si films by ballistic electro-reduction

Ohta, Toshiyuki; Gelloz, Bernard; Kojima, Akira; Koshida, Nobuyoshi

doi:10.1063/1.4788678

Cited by 16 publications

(26 citation statements)

References 22 publications

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“…Planar metal-oxide-semiconductor (MOS) electron emission devices − have excellent attributes, such as a low driving voltage, they function at low , and atmospheric pressures , and in liquids, − and have a low divergence angle for the electron beam . Several practical applications have been proposed, including in field emission displays, , in highly sensitive image sensors, − and for electron beam lithography systems. − The electron emission source plays a critical role in the performance of electron microscopy setups, such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography.…”

Section: Introductionmentioning

confidence: 99%

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Murakami

Igari

Mitsuishi

et al. 2019

ACS Appl. Mater. Interfaces

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In this work, a planar electron emission device based on a graphene/hexagonal boron nitride (h-BN)/n-Si heterostructure is fabricated to realize highly monochromatic electron emission from a flat surface. The h-BN layer is used as an insulating layer to suppress electron inelastic scattering within the planar electron emission device. The energy spread of the emission device using the h-BN insulating layer is 0.28 eV based on the full-width at half-maximum (FWHM), which is comparable to a conventional tungsten field emitter. The characteristic spectral shape of the electron energy distributions reflected the electron distribution in the conduction band of the n-Si substrate. The results indicate that the inelastic scattering of electrons at the insulating layer is drastically suppressed by the h-BN layer. Furthermore, the maximum emission current density reached 2.4 A/cm2, which is comparable to that of a conventional thermal cathode. Thus, the graphene/h-BN heterostructure is a promising material for planar electron emission devices to obtain a highly monochromatic electron beam and a high electron emission current density.

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Section: Introductionmentioning

confidence: 99%

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Murakami

Igari

Mitsuishi

et al. 2019

ACS Appl. Mater. Interfaces

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“…The nc-Si planar cold cathode is composed of a thin Au/Ti film (10 nm/1 nm), an nc-Si layer, n + -Si substrate, and a back contact. As described previously [1,2], the nc-Si layer was formed by a constant-current anodization in an ethanoic HF solution followed by the electrochemical oxidation and subsequent super-critical drying (SCRD) treatments such that the nc-Si dot chain are interconnected with high-quality tunnel oxides.…”

Section: Methodsmentioning

confidence: 99%

“…When a nanocrystalline silicon (nc-Si) surfaceemitting ballistic electron source [1] is driven alone in salt solutions, energetic hot electrons are supplied into the solid-solution interface followed by the reduction of positive ions, and then thin metal and semiconducting films are deposited on the emitting area [2]. In the case of SiCl 4 solutions, thin amorphous Si films are uniformly deposited with neither by-products nor contaminations [3,4].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Thin Si, Ge, and SiGe Films by Ballistic Hot Electron Reduction

Yagi¹,

Suda²,

Kojima³

et al. 2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

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“…When driven in these solutions, thin Si [4], Ge, and SiGe films are deposited uniformly on the emitting surface as in the same manner as the dipping mode [6,[16][17]. The AFM image of a deposited Si film is shown in Fig.…”

Section: Applications As Ballistic Electron Emittermentioning

confidence: 99%

(Invited) Ballistic Hot Electron Effects in Nanosilicon Dots and Their Photonic Applications

et al. 2014

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The physical property of nanocrystalline silicon (nc-Si) dots as a confined wide-gap material relates not only to photonics, but also to electronics. As supported experimentally and theoretically, the electronic structure with discrete levels significantly enhances the impact ionization rate, and then internal electron avalanche occurs at the early stage of photo-excitation or injection. The nc-Si diode, on the other hand, acts as a planar cold cathode which emits ballistic hot electrons. In addition to the use in vacuum, the device is available for the operation in solutions. In vacuum active-matrix nc-Si electron emitter array has been developed for massively parallel electron beam direct-write lithography. Another application scheme in solutions provides alternative thin films deposition of Si, Ge, and SiGe, in which the nc-Si emitter supplies highly reducing electrons. Recent advancements of these studies are discussed.

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Liquid-phase deposition of thin Si films by ballistic electro-reduction

Cited by 16 publications

References 22 publications

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Deposition of Thin Si, Ge, and SiGe Films by Ballistic Hot Electron Reduction

(Invited) Ballistic Hot Electron Effects in Nanosilicon Dots and Their Photonic Applications

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